Semiconductor device and contact pad layout, contact pad structure and mask plate combination thereof

Abstract

The invention provides a semiconductor device and a contact pad layout, a contact pad structure and a mask plate combination thereof. A first edge layout area is arranged on one side of a main layoutarea where a main contact pad pattern is located; the area of each first edge contact pad pattern in the first edge layout area is greater than that of each main contact pad pattern; a main contact pad of a core region and a dummy contact pad of an interface region at the boundary of the core region or between the core region and a peripheral region are formed on the basis of the contact pad layout, so that the top surface area of the virtual contact pad can be greater than that of the main contact pad, further, when the main contact pad and the virtual contact pad are connected with an electrical structure, the size of the electrical structure connected to the virtual contact pad can be increased so as to improve the dense / sparse effect of the circuit pattern between the core region and the peripheral region, the consistency of the electrical structure connected to the main contact pad can be improved, and meanwhile the problem that the electrical structure connected to the main contact pad at the boundary of the core region is abnormal can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and its contact pad layout, contact pad structure and mask combination. Background technique [0002] Various techniques have been used to integrate more circuit patterns in a limited area of ​​a semiconductor substrate or wafer. Due to the difference in circuit pattern spacing, integrated circuits are generally divided into device-dense areas (Dense), device-sparse areas (ISO) and device-isolated areas. It is an area where the device density is low (that is, the devices are relatively sparse), and the device isolated area is an area where relatively sparse areas and dense areas are set separately. As the critical dimensions of semiconductor devices continue to decrease, the density of circuit patterns and / or device heights continue to increase, subject to the resolution limit of the optical exposure tool and the density difference between device-de...

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Problems solved by technology

[0004] The object of the present invention is to provide a semiconductor device and its contact pad layout, contact pad structure and mask combination to solve the problem of optical proximity effect and dense / sparse effect of circuit patterns in existing semiconductor devices such as dynamic random access memories. This leads to the inconsistency of the electrical structure connected to the contact plug inside the core area and the abnormal electrical structure of the contact plug connected to the border of the core area.

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