Thermo-electron effect test structure based on HEMT device and characterization method thereof

Abstract

The invention relates to a thermo-electron effect test structure based on an HEMT device. The thermo-electron effect test structure comprises a substrate (1), a nucleating layer (2), a buffer layer (3), a barrier layer (4), a grid electrode (5), a source electrode (6), a drain electrode (7), a first doped region (9), a second doped region (10), an electrode A (11) and an electrode B (12). The embodiment of the invention provides a hot electron effect test structure based on an HEMT device and adopting a hot electron injection quantity and energy controllable technology, and a characterizationmethod thereof, wherein the injection quantity of hot electrons in a barrier layer is controlled by adjusting a voltage Va and a voltage Vb, and the injection energy of the hot electrons in the barrier layer is controlled by adjusting the voltage Va, so that the problems that the injection quantity and the injection energy of the hot electrons of the device are uncontrollable, the hot electrons are non-uniformly injected into the barrier layer and the like are solved, and the deep analysis of the hot electron effect in the heterojunction device is facilitated.

Description

technical field [0001] The invention belongs to the technical field of semiconductor detection, and in particular relates to a thermal electron effect test structure and a characterization method based on a HEMT device. Background technique [0002] From the first-generation semiconductor materials represented by silicon materials to the second-generation semiconductor materials represented by gallium arsenide materials, and to the third-generation semiconductor materials represented by gallium nitride, the material properties have become more and more excellent. Higher performance semiconductor devices and even integrated circuits provide a solid material foundation. In particular, the third-generation wide-bandgap semiconductor materials have excellent characteristics such as high breakdown field strength, high thermal conductivity, and high electron saturation drift speed. It has unique advantages in areas such as high temperature and radiation resistance. [0003] In p...

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Problems solved by technology

[0004] However, when hot electron stress is applied to HEMTs with conventional structures, due to the potential difference from the drain to the source, the distribution of hot electrons in the channel is not uniform, and the number of carriers in the channel and the intensity of its accelerating electric field are both related to The applied gate-source voltage and gate-drain voltage bias are simultaneously correlated

Therefore, when the thermal electron stress is only applied to the conventional structure HEMT device, it is impossible to realize the uniform injection of hot electrons into the barrier layer, and it is also impossible to independently study the influence of the number of hot electron injections and the injection energy on the performance degradation of the device, so that the thermal electron effect The mechanism of the lack of in-depth research and characterization

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