Hot electron effect characterization method based on compound material MISFET device

Abstract

The invention relates to a test structure based on a thermo-electronic effect of an MISFET device. The test structure comprises a substrate (1), a P type epitaxial layer (2), an insulating layer (3),a passivation layer (4), a grid electrode (5), a first N+ doped region (6), a source electrode (7), a drain electrode (8), a P+ doped region (9), a second N+ doped region (10), an electrode A (11) andan electrode B (12). The embodiment of the invention provides a heterojunction device test structure of a hot electron injection quantity and energy controllable technology, and a hot electron effectcharacterization method, wherein the injection quantity of hot electrons in a insulating layer is controlled by adjusting a voltage Va and a voltage Vb, and the injection energy of the hot electronsin the insulating layer is controlled by adjusting the voltage Va, so that the problems of uncontrollable hot electron injection quantity and injection energy of the device, non-uniform injection of the insulating layer and the like are solved, and the deep analysis of the hot electron effect in the heterojunction device is facilitated.

Description

technical field [0001] The invention belongs to the technical field of microelectronic reliability characterization, and in particular relates to a thermal electron effect characterization method based on a compound material MISFET device. Background technique [0002] From the first-generation semiconductor materials represented by silicon materials to the second-generation semiconductor materials represented by gallium arsenide materials, to the third-generation semiconductor materials represented by gallium nitride, the material properties have become more and more excellent. High-performance semiconductor devices and even integrated circuits provide a solid material foundation. In particular, the third-generation wide-bandgap semiconductor materials have excellent characteristics such as high breakdown field strength, high thermal conductivity, and high electron saturation drift speed. Semiconductor devices based on them can operate at high power, high frequency, high vo...

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Problems solved by technology

[0004] However, when hot electron stress is applied to n-channel MISFET devices with conventional structures, due to the potential difference from the drain to the source, the distribution of hot electrons in the channel is not uniform, and the number of carriers in the channel and its acceleration The electric field strength is simultaneously related to the applied gate-source voltage and gate-drain voltage bias

Therefore, when the thermal electron stress is only applied to the conventional n-channel MISFET device, it is impossible to inject hot electrons uniformly into the insulating layer, and it is also impossible to independently study the influence of the number of hot electron injections and the injection energy on the performance degradation of the device. The mechanism of the electronic effect lacks in-depth research and characterization

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