[0046] The description of the following embodiments refers to the attached drawings to illustrate specific embodiments in which the present invention can be implemented. The directional terms mentioned in the present invention, such as [Up], [Down], [Front], [Back], [Left], [Right], [Inner], [Outer], [Side], etc., are for reference only The direction of the additional schema. Therefore, the directional terms used are used to describe and understand the present invention, rather than to limit the present invention. In the figure, units with similar structures are indicated by the same reference numerals.
[0047] The present invention aims at the prior art flexible Micro-LED display panel that is not easy to bend and is prone to breakage, resulting in low product yield. This embodiment can solve this defect.
[0048] Such as figure 1 As shown, the flexible Micro-LED display panel provided by the embodiment of the present invention includes an array substrate, a first connection electrode layer 112, a second connection electrode layer 113, a plurality of Micro-LED chips 115, a flexible packaging layer 116, and a second substrate. Base substrate 117.
[0049] The array substrate includes a first base substrate 101 and a thin film transistor array layer disposed on the first base substrate 101. Specifically, the array substrate further includes a barrier layer 102, a light shielding layer 103, a buffer layer 104, The interlayer dielectric layer 108, the passivation layer 111 and the black matrix layer 114, wherein the thin film transistor array layer includes an active layer 105, a gate insulating layer 106, a gate layer 107, and a source 109 and a drain 110.
[0050] The first base substrate 101 is a flexible substrate, and the material used for the first base substrate 101 may be transparent polyimide (Colorless Polyimide, CPI), because the CPI material has the excellent properties of traditional polyimide , Has the characteristics of high heat resistance, high reliability, flex resistance, low density, low dielectric constant, easy to realize the processing of micro-pattern circuits, etc., and can be applied to the flexible display technology of the folding screen; the barrier layer 102 is arranged on the first A base substrate 101 is used to prevent external moisture or oxygen from corroding the thin film transistor array layer. Optionally, the barrier layer 102 may be made of composite materials such as TG-41 polymer, which has good properties Water and oxygen barrier performance; the light-shielding layer 103 is disposed on the barrier layer 102, and the light-shielding layer 103 is disposed opposite to the active layer 105, which can effectively block ambient light to shield the active layer 105 Protection; the buffer layer 104 covers the light-shielding layer 103 and the barrier layer 102, the buffer layer 104 can be made of silicon nitride or silicon oxide materials, play a role in buffering and protection.
[0051] The active layer 105 is disposed on the buffer layer 104, and the active layer 105 can be made of indium gallium zinc oxide (IGZO) material, which can make the prepared thin film transistor array layer appear transparent Flexible; the gate insulating layer 106 is disposed on the active layer 105; the gate layer 107 is disposed on the gate insulating layer 106; the interlayer dielectric layer 108 covers the gate layer 107 On the active layer 105 and the buffer layer 104, the material of the interlayer dielectric layer 108 may be an insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and the interlayer dielectric layer may be a single layer The structure, such as a single-layer silicon nitride layer, a single-layer silicon oxide layer, etc., may also be a multi-layered structure, such as a silicon nitride/silicon oxide stack; the source electrode 109 and the drain electrode 110 are arranged at On the interlayer dielectric layer 108, the source electrode 109 and the drain electrode 110 are connected to the active layer 105 through via holes; the passivation layer 111 covers the source electrode 109 and the drain electrode 110 And the interlayer dielectric layer 108, the material of the passivation layer 111 may be silicon nitride or silicon oxide.
[0052] Optionally, the light shielding layer 103, the gate layer 107, the source electrode 109, and the drain electrode 110 are made of aluminum-neodymium alloy. Since the aluminum-neodymium alloy is suitable for flexible bending, The folding performance of the flexible Micro-LED display panel can be improved.
[0053] The first connection electrode layer 112 is disposed on the thin film transistor array layer, and is electrically connected to the thin film transistor through a via hole. The material of the first connection electrode layer 112 may be indium tin oxide (Indium Tin Oxide). tinoxide, ITO); the second connection electrode layer 113 is disposed on the first connection electrode layer 112, and the material of the second connection electrode layer 113 may be a metal material, such as copper.
[0054] A plurality of Micro-LED chips 115 are disposed on the second connection electrode layer 113, and the Micro-LED chips 115 are connected to the thin film transistor via the first connection electrode layer 112 and the second connection electrode layer 113 On the drain 110 of the array layer to transmit electrical signals from the thin film transistor to the Micro-LED chip 115; specifically, a side of the Micro-LED chip 115 close to the second connecting electrode layer 113 is provided with The first pin 1151 and the second pin 1152, the first pin 1151 and the second pin 1152 and the second connecting electrode layer 113 realize die bond bonding.
[0055] The black matrix layer 114 is arranged between two adjacent Micro-LED chips 115 to prevent crosstalk of light emitted by two adjacent Micro-LED chips 115.
[0056] The flexible packaging layer 116 covers the Micro-LED chip 115 for packaging the Micro-LED chip 115. In the embodiment of the present invention, the flexible packaging layer 116 covers the Micro-LED chip 115, the The black matrix layer 114 and the second connection electrode layer 113. Optionally, the material of the flexible encapsulation layer 116 may be a composite material such as TG-41 polymer, which not only has good water and oxygen barrier performance, but also improves the folding performance of the flexible Micro-LED display panel.
[0057] The second base substrate 117 is disposed on the flexible packaging layer 116. Optionally, the material of the second base substrate 117 can be the same as the material of the first base substrate 101, and CPI material is also used Since the flexible Micro-LED display panel is folded, the metal traces in the thin film transistor array layer are prone to breakage, so it should be noted that the neutral layer A is in the flexible Micro- The surface (film) formed at all positions where the stress on the LED display panel is zero during the folding and bending process, where the metal wiring is not prone to breakage, so in the embodiment of the present invention, the second base substrate can be adjusted The thickness of 117 controls the neutral layer A of the flexible Micro-LED display panel to be located on the thin film transistor array layer, thereby reducing the risk of metal wiring disconnection when the flexible Micro-LED display panel is folded.
[0058] Specifically, the thickness of the second base substrate 117 is 8um-12um.
[0059] Such as figure 2 As shown, the embodiment of the present invention also provides a method for manufacturing a flexible Micro-LED display panel, which includes the following steps:
[0060] S10: Prepare an array substrate, the array substrate includes a first base substrate 101, and a thin film transistor array layer is formed on the first base substrate 101.
[0061] Specifically, step S10 includes the following steps:
[0062] S101: Provide the first base substrate 101, and sequentially form a barrier layer 102, a light shielding layer 103, and a buffer layer 104 on the first base substrate 101.
[0063] Such as Figure 3A As shown, the barrier layer 102, the light-shielding layer 103 having a preset pattern, and the buffer layer 104 covering the light-shielding layer 103 and part of the barrier layer 102 can be formed by using a chemical vapor deposition method or a sputtering process, wherein The process of patterning the light shielding layer 103 may be wet or dry etching, and the material of the light shielding layer 103 may be an aluminum-neodymium alloy.
[0064] S102: forming the thin film transistor array layer on the buffer layer 104, the thin film transistor array layer including an active layer 105, a gate insulating layer 106, a gate layer 107, and an active layer 105 sequentially formed on the buffer layer 104. The interlayer dielectric layer 108, the source electrode 109, the drain electrode 110 and the passivation layer 111.
[0065] Such as Figure 3B As shown, first, the active layer 105, the gate insulating layer 106, the active layer 105 and the gate insulating layer 106 can be sequentially formed on the side of the buffer layer 104 away from the first base substrate 101 by chemical vapor deposition or other processes. The gate layer 107, the interlayer dielectric layer 108, the source electrode 109 and the drain electrode 110 in a preset pattern, wherein the orthographic projection of the active layer 105 on the first base substrate 101 is located In the orthographic projection of the light shielding layer 103 on the first base substrate 101, the material of the active layer 105 may be IGZO; the material of the gate insulating layer 106 may be silicon oxide, silicon nitride The material of the gate layer 107, the source electrode 109 and the drain electrode 110 may be aluminum-neodymium alloy; the material of the interlayer dielectric layer 108 includes silicon oxide, silicon nitride, and oxynitride At least one of silicon; afterwards, a passivation layer can be formed on the source electrode 109, the drain electrode 110, and the interlayer dielectric layer 108 sequentially by chemical vapor deposition or other processes, and formed through the For the via holes of the passivation layer 111, the material passing through the passivation layer 111 may be an insulating material such as silicon oxide, silicon nitride, or silicon oxynitride.
[0066] S20: sequentially forming a first connection electrode layer 112, a second connection electrode layer 113, and a black matrix layer 114 on the thin film transistor array layer, and the first connection electrode layer 112 and the second connection electrode layer 113 are electrically connected .
[0067] Such as Figure 3C As shown, the first connection electrode layer 112, the second connection electrode layer 113, and the black matrix layer 114 are sequentially formed on the passivation layer 111, and the first connection electrode layer 112 and the second The two connecting electrode layers 113 are arranged in different layers. The black matrix layer 114 covers part of the passivation layer 111 and part of the second connecting electrode layer 113. The first connecting electrode layer 112 penetrates the passivation layer 111. The via hole of is electrically connected to the drain 110, the material of the first connection electrode layer 112 may be ITO, and the material of the second connection electrode layer 113 may be a metal material, such as copper.
[0068] S30: Transfer a plurality of Micro-LED chips 115 to the second connection electrode layer 113, and perform a die bonding process so that the Micro-LED chips 115 pass through the first connection electrode layer 112 and the The second connection electrode layer 113 is connected to the thin film transistor array layer.
[0069] Such as Figure 3D As shown, the Micro-LED chip 115 includes a first pin 1151 and a second pin 1152, and the first pin 1151 and the second pin 1152 are electrically connected to the second connection electrode layer 113 The black matrix layer 114 is located between two adjacent Micro-LED chips 115.
[0070] S40: forming a flexible packaging layer 116 on the Micro-LED chip 115.
[0071] Such as Figure 3E As shown, the flexible packaging layer 116 is used to encapsulate the Micro-LED chip 115 to prevent the Micro-LED chip 115 from being corroded by external water and oxygen. The material used for the flexible packaging layer 116 is TG-41 polymer And other composite materials.
[0072] S50: forming a second base substrate 117 on the flexible packaging layer 116 so that the neutral layer A of the flexible Micro-LED display panel is located on the thin film transistor array layer.
[0073] Such as Figure 3F As shown, the material of the second base substrate 117 may be CPI, and the thickness of the second base substrate 117 is 8um-12um. The thickness of the second base substrate 117 can be adjusted to make the flexibility The middle layer of the Micro-LED display panel is located on the thin film transistor array layer to reduce the risk of metal wiring disconnection.
[0074] The beneficial effect is: the flexible Micro-LED display panel and the manufacturing method thereof provided by the embodiments of the present invention, the neutrality of the flexible Micro-LED display panel is made by arranging a second base substrate on the flexible packaging layer covering the Micro-LED chip. The layer is located on the thin film transistor array layer, thereby reducing the risk of metal wiring disconnection; the first base substrate and the second base substrate are made of CPI transparent flexible materials, and through the use of IGZO process, AL-Nd manufacturing process, and setting of barrier layers and The encapsulation layer is used for water and oxygen barrier, so as to realize the flexible display of the Micro-LED display panel, and has the advantages of high transparency, high response speed, high color gamut, long life, low power consumption, thinness, and drop resistance. It can be made into a small curvature It can even realize dynamic bending, which greatly broadens the scope of display applications.
[0075] In summary, although the present invention has been disclosed in preferred embodiments as above, the above-mentioned preferred embodiments are not intended to limit the present invention. Those of ordinary skill in the art can make various modifications without departing from the spirit and scope of the present invention. Such changes and modifications, therefore, the protection scope of the present invention is subject to the scope defined by the claims.
