Device and method for regulating and controlling sensitivity of silicon nanowire sensor through light

A technology of silicon nanowires and sensors, applied in the field of devices that use light to regulate the sensitivity of silicon nanowire sensors, can solve problems that have not been raised, and achieve the effects of simple structure, convenient operation, and effective regulation

Active Publication Date: 2020-09-29
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF8 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the method of adjusting the sensitivity of the silicon nanowire sensor by changing the light intensity around the silicon nanowire sensor has not been proposed so far. In this application, we creatively proposed to adjust the nanowire sensor by changing the light intensity around the silicon nanowire sensor. Methods of Sensor Sensitivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for regulating and controlling sensitivity of silicon nanowire sensor through light
  • Device and method for regulating and controlling sensitivity of silicon nanowire sensor through light
  • Device and method for regulating and controlling sensitivity of silicon nanowire sensor through light

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention. It can be understood that the photoresponse principle of silicon nanowires is that photoexcitation generates electron-hole pairs, which changes the internal carrier concentration and changes the resistance value macroscopically. Under normal circumstances, the influence of light intensity on the conductivity of silicon nanowires is much greater than that o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a device and method for regulating and controlling the sensitivity of a silicon nanowire sensor through light. The device comprises the silicon nanowire sensor used for outputting a sensitive signal of a test target object and converting the sensitive signal into an electric signal, a light source used for providing preset illumination intensity for the silicon nanowire sensor, an optical power regulator which is used for regulating preset illumination intensity, and a signal processor which is used for carrying out signal processing and feedback. According to the device, the power-adjustable light source is arranged at the top end of the silicon nanowire sensor to change the illumination condition around the silicon nanowire sensor, so that the function of regulating and controlling the sensitivity is realized. According to the method, the silicon nanowire sensor has different response sensitivities under different illumination intensities, and the sensitivity of the sensor is regulated and controlled by setting proper illumination conditions. The device is simple in structure, convenient to operate and free of damage to the device, and the sensitivity of the silicon nanowire sensor can be conveniently and effectively regulated and controlled.

Description

technical field [0001] The invention relates to the technical field of sensor sensitivity control, in particular to a device and method for regulating the sensitivity of a silicon nanowire sensor by using light. Background technique [0002] In the past decade, silicon nanowires have received great attention because of their broad application prospects in many fields. Among them, the research progress in biosensors is the most enormous. The reason why silicon nanowire sensors have great application prospects in the field of biological detection is because of their ultra-high sensitivity. The ultra-high sensitivity of silicon nanowire sensors is mainly due to its huge specific surface area. Compared with bulk materials, the large specific surface area makes the influence of the change of the surface potential of silicon nanowires on the overall conductivity not only non-negligible, but even a dominant factor. Therefore, increasing the specific surface area of ​​silicon nan...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01N21/17G01N27/00B82Y15/00
CPCB82Y15/00G01N21/17G01N27/00
Inventor 李铁杨义陈世兴王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap