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Silicon-based antenna dynamic model based on heterogeneous integrated system

An integrated system and dynamic model technology, applied in antennas, antenna coupling, resonant antennas, etc., can solve the problems of high antenna unit section, inability to adjust and optimize, and difficulty in meeting the requirements of high integration of microsystems, so as to optimize radiation performance, Effects that improve scanning performance

Pending Publication Date: 2020-10-09
CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
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  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The problems existing in the existing technology are: 1. The existing antenna unit model is a customized model, which cannot be flexibly adjusted and optimized in different usage scenarios; 2. Ordinary antenna units have high profile and independent models, usually based on metal , Microwave board material processing, it is difficult to meet the high integration requirements of microsystems

Method used

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  • Silicon-based antenna dynamic model based on heterogeneous integrated system
  • Silicon-based antenna dynamic model based on heterogeneous integrated system
  • Silicon-based antenna dynamic model based on heterogeneous integrated system

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Embodiment Construction

[0017] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0018] Such as figure 1 As shown, a silicon-based antenna dynamic model based on a heterogeneous integrated system according to the present invention includes a radiation layer 1, a coupling layer 2, a microstrip feed layer 3, an array antenna formation layer 4, a radiation metal isolation column 5, and a feed layer The electrical metal isolation column 6 and the feed connector 7 are characterized in that: the radiation layer 1, the coupling layer 2, and the feed layer 3 are all single-layer radio frequency structures made by standard silicon technology, and the radiation metal isolation column 5 Located between the radiation layer 1 and the coupling layer 2, the feeding metal isolation column 6 is located between the array antenna ground layer 4 of the coupling layer 2, and the feeding connector 7 is connected to the coupling layer 2 and the...

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Abstract

The invention discloses a silicon-based antenna dynamic model based on a heterogeneous integrated system. The antenna comprises a radiation layer (1), coupling layer (2), a microstrip feed layer (3),an array antenna ground layer (4), a radiation metal isolation column (5), a feed metal isolation column (6) and a feed connector (7), wherein the radiation layer (1), the coupling layer (2) and the microstrip feed layer (3) are all of a single-layer radio frequency structure manufactured by adopting a standard silicon process, the radiation metal isolation column (5) is located between the radiation layer (1) and the coupling layer (2), the feed metal isolation column (6) is located between the coupling layer (2) and the array antenna ground layer (4), and the feed connector (7) realizes radio frequency interconnection with the coupling layer (2) and the active radiation layer (1) through the microstrip feed layer (3). According to the antenna model disclosed by the invention, the substrate material is adjustable, the parameters of each layer are adjustable, the feeding mode is adjustable, and the heterogeneous integration level of a micro system is high.

Description

technical field [0001] The invention relates to microwave antenna technology, in particular to a silicon-based antenna dynamic model based on a heterogeneous integrated system. Background technique [0002] The development of antenna technology is based on the simultaneous development of design theory and material device technology. In order to meet the multi-level and multi-specialty collaborative design requirements of microsystems, it is necessary to develop silicon-based antenna IP library technology based on silicon-based integrated process platforms. Around the miniaturization, light weight, and integrated high-density integration of antennas, silicon-based antennas must first be developed. Theoretical research breaks through the existing standards and provides a new design scheme that meets the design requirements. Secondly, it closely combines the development of silicon-based material science and manufacturing technology, so that the research on high-density integrat...

Claims

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Application Information

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IPC IPC(8): H01Q1/38H01Q1/50H01Q1/52H01Q9/04H01Q21/00
CPCH01Q1/38H01Q1/50H01Q1/521H01Q9/0407H01Q21/00
Inventor 侍颢杨磊齐丹丹王力潘宇虎
Owner CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
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