Unlock instant, AI-driven research and patent intelligence for your innovation.

Synthesis method of indium-arsenic-antimony polycrystalline raw material

A synthesis method, the technology of indium arsenic antimony, which is applied in the growth of polycrystalline materials, chemical instruments and methods, single crystal growth, etc., can solve the problems of synthesizing indium arsenic antimony polycrystalline raw materials and large differences in melting points

Active Publication Date: 2020-10-13
进化半导体(深圳)有限公司
View PDF15 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the melting points of In, As, and Sb are very different (the melting point of In is 156.6°C, the melting point of As is 817°C, and the melting point of Sb is 630.6°C), and when the temperature reaches 613°C, As directly sublimes into vapor, so it cannot pass through Heating and melting In, As, and Sb three elemental elements to undergo a compound reaction to synthesize indium, arsenic, and antimony polycrystalline raw materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Synthesis method of indium-arsenic-antimony polycrystalline raw material
  • Synthesis method of indium-arsenic-antimony polycrystalline raw material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] Example to obtain InAs 0.05 Sb 0.95 The synthesis method of the polycrystalline raw material will be described.

[0018] The invention provides an InAs 0.05 Sb 0.95 The synthesis method of polycrystalline raw materials, through the design of specific raw material components, the use of special synthesis equipment and original raw material synthesis technology, successfully synthesized kilogram-level InAs 0.05 Sb 0.95 Polycrystalline raw material for subsequent large-scale InAs 0.05 Sb 0.95 The preparation of bulk single crystal laid the foundation.

[0019] The specific technical solution is that an InAs 0.05 Sb 0.95 The synthesis method of polycrystalline raw materials includes three parts: "raw material component design", "raw material synthesis device structure design" and "single crystal growth process design".

[0020] The "raw material component design" includes three aspects. One is to select a material with a low saturated vapor pressure as the basic ma...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a synthesis method of an indium-arsenic-antimony polycrystalline raw material. By designing specific raw material components and adopting a special synthesis device and an original raw material synthesis process, a kilogram-level InAsxSb<1-x> (x is greater than or equal to 0 and less than or equal to 0.1) polycrystalline raw material is successfully synthesized, and a foundation is laid for subsequent preparation of large-size indium-arsenic-antimony single crystals.

Description

technical field [0001] The invention relates to a method for synthesizing polycrystalline indium arsenic and antimony raw materials, and belongs to the field of semiconductor material preparation. Background technique [0002] In recent years, medium and long-wave (5-12um) infrared detectors have attracted widespread attention from various countries due to their huge civilian and military prospects in infrared imaging, environmental monitoring, infrared guidance, and resource detection, while indium arsenic antimony (InAs x Sb 1-x ,0≤x≤0.1) As the content of As increases, the intrinsic absorption edge of the material expands to the long-wave direction, and it becomes a strong competitor for infrared detectors in the medium and long-wave infrared band (5-12μm). However, the melting points of In, As, and Sb are very different (In, As, 817°C, and Sb, 630.6°C). Indium Arsenic Antimony polycrystalline material is synthesized by heating and melting the three elemental elements o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B11/00C30B28/06
CPCC30B29/40C30B11/002C30B28/06
Inventor 练小正
Owner 进化半导体(深圳)有限公司