Analog-to-digital converter based on thin film transistor, chip and control method

Abstract

The invention discloses an analog-to-digital converter based on a thin film transistor, a chip and a control method. A reference voltage is provided for a comparator module through a reference level module, a comparison unit compares the reference voltage with an analog signal input quantity to output a first comparison quantity, then a pseudo CMOS inverter unit processes the first comparison quantity to obtain a second comparison quantity, and a decoder module decodes the second comparison quantity to obtain an output digital quantity; the pseudo CMOS inverter unit is arranged to process thefirst comparison quantity; the output swing and the direct current gain of the circuit are increased by utilizing the characteristic that the pseudo CMOS inverter unit has a shaping effect on the waveform; and due to the improvement of the direct current gain, the obtained second comparison quantity is a value obtained by further amplifying the first comparison quantity, so that the overall resolution of the comparator module can be improved, and the differential nonlinear error and the integral nonlinear error of the analog-to-digital converter are reduced. The analog-to-digital converter canbe widely applied to the technical field of integrated circuits.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to an analog-to-digital converter based on thin film transistors, a chip and a control method. Background technique [0002] Analog-to-digital converters are important components in integrated circuits, used to convert analog signals into digital signals, and are widely used. Metal oxide thin film transistor (Meta oxide thin film transistor, MO-TFT) has the advantages of low manufacturing cost, good light transmission performance, large-area manufacturing and flexible substrate. The analog-to-digital converter based on MO-TFT has potential application prospects in the temperature measurement of electronic thermometers, digital cameras, humidity, light, sound in the air, and detection of analog signals such as biomedical electrical signals. However, limited by the development of process manufacturing level, the current process level can only manufacture unipolar n-type TFT devices...

AI Technical Summary

Problems solved by technology

However, limited by the development of process manufacturing level, the current process level can only manufacture unipolar n-type TFT devices, and the lack of complementary device p-type TFTs makes the inverting phase in the existing MO-TFT analog-to-digital converters The converter is usually designed based on the traditional diode load structure, resulting in poor DC gain and narrow output swing, which ultimately leads to low resolution, low accuracy, and poor performance of the ADC

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