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A kind of etching method of vertical cavity surface emitting laser chip

A vertical cavity surface emission and laser technology, applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of inability to realize real-time monitoring of etching depth, uneven wafer, EPD signal disorder, etc., to achieve ideal signal and realize Real-time monitoring, the effect of reducing the impact

Active Publication Date: 2020-12-04
江西德瑞光电技术有限责任公司
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Problems solved by technology

However, in actual operation, due to the certain inhomogeneity of conventional etching, there will be certain inhomogeneity on the entire wafer during the etching process, resulting in the disorder of the EPD signal, and it is impossible to realize the control of the etching depth. real time monitoring

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  • A kind of etching method of vertical cavity surface emitting laser chip
  • A kind of etching method of vertical cavity surface emitting laser chip
  • A kind of etching method of vertical cavity surface emitting laser chip

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[0026] In order to make the purpose, features and advantages of the present invention more obvious and understandable, the specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings. Several embodiments of the invention are shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0027] It should be noted that the factors affecting the uniformity of etching mainly come from the uniformity of the etching machine itself and the etching conditions used, such as gas composition, flow rate, chamber pressure, etching power, etc. The influence of uniformity is a macroscopic influence, and the general rule is that the etching depth changes monotonously from the center of the wafer to the edge. As ...

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Abstract

The invention discloses an etching method for a vertical cavity surface emitting laser chip, which comprises the following steps: selecting a wafer, etching a number of round terraces on the wafer; etching a channel around each of the round terraces, The width-to-depth ratio of the channel is 0.05-0.5. In the present invention, the aspect ratio of 0.05-0.5 is selected during etching, which can effectively weaken the influence of the gas flow in the etching machine cavity on etching, improve the uniformity of the etching depth of the vcsel channel, and make the EPD signal more ideal. Realize real-time monitoring of etching depth.

Description

technical field [0001] The invention relates to the technical field of chip manufacturing, in particular to an etching method for a vertical cavity surface emitting laser chip. Background technique [0002] Vertical cavity surface emitting laser (VCSEL) is a kind of semiconductor laser, which has been widely used in many fields such as optical communication, information reading, three-dimensional imaging, and laser radar. [0003] In the VCSEL chip structure, at least one circular platform is included, and the circular platform is the effective light-emitting area of ​​the vcsel device. During the chip manufacturing process, the wafer is etched with a dry etching machine, and the isolation of the round platform from the surrounding structure is realized by etching the trench. In the manufacture of vcsel devices, it is necessary to precisely control the etching depth of the channel. In order to achieve precise control of the etching depth, an end point detection device (EPD...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183
CPCH01S5/183
Inventor 徐化勇李春勇舒凯仇伯仓柯毛龙冯欧
Owner 江西德瑞光电技术有限责任公司
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