Silicon pressure sensor module with low stress effect

Abstract

The invention discloses a silicon pressure sensor module with a low stress effect, which comprises a shell, wherein the shell is internally provided with a sensor chip and a circuit chip. The siliconpressure sensor module further comprises a metal sheet, wherein the metal sheet extends into the shell, the shell is provided with a through cavity, the cavity comprises a surface A and a surface B, the surface A is close to an air hole, the circuit chip is fixed to the side, which faces the surface B, of the metal sheet through silica gel with a low expansion coefficient, the sensor chip is fixedto the side, which faces the surface A, of the circuit chip through metal glue with a low expansion coefficient, and the interior of the shell is completely coated with protective gel to wrap the metal sheet, the circuit chip and the sensor chip. The cavity is formed in the shell, the circuit chip only depends on the metal sheet as a supporting point, no redundant plastic is attached to the circuit chip, and the stress resistance characteristic under different temperature conditions is achieved. The circuit chip and the metal sheet as well as the sensor chip and the circuit chip are fixed through glue with low expansion coefficients, when the environment temperature rises, the heated expansion amplitude is small, and the expansion directions of the two are opposite, so that the influenceof stress is reduced.

Description

technical field [0001] The invention belongs to the technical field of sensors, in particular to a silicon pressure sensor. Background technique [0002] The silicon pressure sensor made by MEMS technology has the characteristics of simple structure, high sensitivity and high reliability, and is widely used in pressure monitoring and data acquisition in various environments. However, the current silicon pressure sensor is limited to volume and structure design. Stress is generated by the material itself due to external force, expansion or contraction during high and low temperature changes. [0003] Currently common silicon pressure sensors have two solutions for stress improvement: [0004] One is to use low expansion coefficient, high sealing plate, such as ceramics, metal sheet. [0005] The second is to use silica gel with a low hardness coefficient as the connection between the platform and the silicon press chip, and use the ductility of silica gel to play a certain ...

AI Technical Summary

Problems solved by technology

[0006] The common disadvantage of these two solutions is that the process structure is relatively complex, involving multiple combinations, and the expansion coefficient does not match, resulting in product performance that still cannot meet the needs of micro-pressure measurement or high-precision markets.

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