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Temperature correction circuit and method of operating power amplifier

A power amplifier and temperature correction technology, applied in the direction of power amplifiers, amplifiers, high-frequency amplifiers, etc., can solve the problem of not being able to capture the dynamic thermal behavior of power amplifiers

Pending Publication Date: 2020-11-17
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, this type of calculation does not capture the dynamic thermal behavior of the PA, which can be an important consideration, especially in time-division duplex (TDD) systems and flip-chip packaging

Method used

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  • Temperature correction circuit and method of operating power amplifier
  • Temperature correction circuit and method of operating power amplifier
  • Temperature correction circuit and method of operating power amplifier

Examples

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Embodiment Construction

[0076] Embodiments of the present disclosure are described below with reference to the drawings.

[0077] figure 1 A block diagram of a radio frequency front end 10 (hereinafter referred to as "front end" or "RFFE") according to one embodiment of the present disclosure is shown.

[0078] The RFFE 10 includes an antenna 16 that can be used to transmit and receive radio frequency signals. Switches 14 may be provided to route transmitted and received signals within RFFE 10 . Such as figure 1 As shown, switch 14 may be set to connect antenna 16 to the transmit path (Tx) of RFFE 10 . Alternatively, the switch 14 may be set to connect the antenna to the receive path (Rx) of the RFFE 10 . The receive path may include a low noise amplifier 28 for amplifying received radio frequency signals.

[0079] Features in the transmission path of RFFE 10 will now be described.

[0080] The RFFE 10 includes a power amplifier 4 . The power amplifier 4 may comprise transistors, for example b...

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PUM

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Abstract

A temperature correction circuit and method for maintaining a transistor of a power amplifier in a linear operating region of the transistor. The temperature correction circuit includes a first current source circuit operable to provide a first correction current proportional to an absolute temperature of a semiconductor die including the transistor. The temperature correction circuit also includes a second current source circuit operable to provide a second correction current proportional to a change in temperature of a part of the semiconductor die in which the transistor is located during operation of the transistor. The temperature correction circuit further includes a third current source circuit operable to provide a gain selection current. The temperature correction circuit also includes circuitry for producing a reference current from the first and second correction currents and the gain current. The temperature correction circuit further includes an output for providing the reference current to the transistor.

Description

technical field [0001] This specification relates to a temperature correction circuit for keeping the transistors of a power amplifier in the linear operating region. The description also relates to a method of operating a power amplifier. Background technique [0002] Traditionally, static error vector magnitude (EVM) calculations for power amplifiers are based on amplitude-to-amplitude modulation (AM / AM) and amplitude-to-phase modulation (AM / PM) distortion, and are mainly related to P out / (I cq 2 .R 1 ) is proportional, where P out is the output power of the power amplifier, I cq is the quiescent current of the power amplifier, R 1 is the load impedance. [0003] However, this type of calculation does not capture the dynamic thermal behavior of the PA, which can be an important consideration, especially in time-division duplex (TDD) systems and flip-chip packaging. [0004] The dynamic error vector magnitude (DEVM) depends directly on the power gain variation. In...

Claims

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Application Information

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IPC IPC(8): H03F1/32H03F3/20
CPCH03F1/32H03F3/20H03F1/0261H03F2200/451H03F3/195H03F1/302H03F2203/21127H03F2203/21131H03F2200/528H03F2200/447H03F1/0205H03F1/30H03F3/19H03F3/211H03G2201/708
Inventor 哈姆扎·纳贾里克里斯托夫·科尔迪耶让-巴普蒂斯特·贝格雷
Owner NXP BV