Light source, polarization and mask joint optimization method and electronic equipment
A technology of combined optimization and light source, applied in optomechanical equipment, microlithography exposure equipment, optics, etc., can solve the problems of unsatisfactory light source, mask and polarization optimization, and achieve the effect of good process manufacturing window
Pending Publication Date: 2020-11-20
DONGFANG JINGYUAN ELECTRON LTD
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[0006] In order to overcome the problem of unsatisfactory optimization of light source, mask and polarization in the existing photolithography technology, the present invention provides a joint optimization method of light source, polarization and mask and electronic equipment
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[0071] In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and implementation examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0072] see figure 1 , the first embodiment of the present invention provides a light source, polarization and mask joint optimization method, including the following steps:
[0073] S1. Inputting the design layout of the mask;
[0074] In the present invention, at first provide the design figure of a target chip, according to the design figure of target chip design the design layout of the mask corresponding to this target chip design figure, the design layout of mask is according to the lithography requirement of the design figure of target chip It is obtained by laying out, and...
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The invention relates to the technical field of integrated circuit photoetching, in particular to a light source, polarization and mask joint optimization method and electronic equipment. According tothe invention, the method comprises the following steps: S1, inputting a design layout of a mask; S2, setting a plurality of error monitoring points on the design layout of the mask; S3, setting an optimization variable x, wherein the optimization variable x comprises a light source intensity variable, a polarization angle variable and a mask variable; S4, associating error monitoring points based on the Hopkins-Abbe hybrid photoetching imaging model to obtain a target function cost related to the optimization variable x; and S5, optimizing the objective function cost until the objective function cost is converged to obtain the optimized mask, light source and polarization, and optimizing the light source intensity variable, the polarization angle variable and the mask variable based on the Hopkins-Abbe hybrid photoetching imaging model, so that a better process manufacturing window can be obtained.
Description
【Technical field】 [0001] The present invention relates to the technical field of integrated circuit photolithography, in particular to a joint optimization method for light source, polarization and mask and electronic equipment. 【Background technique】 [0002] The photolithography process is the most important manufacturing process in the modern large-scale integrated circuit manufacturing process, that is, an important means to transfer the design pattern of the integrated circuit on the mask to the silicon wafer through the photolithography machine. When the integrated circuit design pattern on the mask is imaged on the silicon wafer through the projection objective lens of the lithography machine, as the feature size of the pattern on the mask becomes smaller, the diffraction phenomenon of light becomes more and more significant. When some high-order diffracted light cannot participate in imaging due to the limitation of the aperture of the projection objective optical sy...
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IPC IPC(8): G03F1/36G03F7/20
CPCG03F1/36G03F7/70558G03F7/70566
Inventor 丁明施伟杰
Owner DONGFANG JINGYUAN ELECTRON LTD