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Gluing and photoetching method applied to wafer with steps on surface

A wafer and gluing technology, applied in the field of photolithography technology, can solve problems such as bad spots, easy to generate bubbles, and affect imaging quality

Pending Publication Date: 2020-11-24
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, when the photolithography process is carried out on the substrate according to the standard process lithography, such as figure 1 As shown in the figure, due to the large steps on the surface of the substrate, bubbles are likely to be generated at the steps after the glue is applied. Because the bubble area loses support, fractures will be formed in the subsequent process, and bad spots will be formed directly, which will affect the imaging quality.

Method used

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  • Gluing and photoetching method applied to wafer with steps on surface
  • Gluing and photoetching method applied to wafer with steps on surface
  • Gluing and photoetching method applied to wafer with steps on surface

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Embodiment Construction

[0013] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0014] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, ...

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Abstract

The invention relates to the technical field of photoetching processes, in particular to a gluing and photoetching method applied to a wafer with steps on the surface. The method comprises the following steps: performing tackifying treatment on the surface of the wafer; gluing the wafer subjected to the tackifying treatment so as to form a photoresist layer on the surface of the wafer; baking thephotoresist layer for the first time; and carrying out second baking on the photoresist layer after the first baking, the temperature of the second baking being lower than the temperature of the firstbaking. When the surface of the wafer fluctuates greatly (for example, the height of the step is greater than 5 microns), bubbles are easy to form at the step after rotary gluing. According to the invention, the bubbles are removed by adding the second baking, and the developing effect is not influenced.

Description

technical field [0001] The invention relates to the technical field of photolithography technology, in particular to a glue coating and photolithography method applied to wafers with steps on the surface. Background technique [0002] Photolithography is a key process in the manufacture of integrated circuits. It uses the principle of photochemical reaction to transfer the pattern prepared in advance on the mask plate to a substrate, making selective etching and ion implantation possible. Photolithography is a crucial link in the fabrication process of micro-nano devices; whether it is semiconductor devices, optoelectronic devices, or micro-electromechanical systems, the preparation of photolithography is inseparable. [0003] At present, when the photolithography process is carried out on the substrate according to the standard process lithography, such as figure 1 As shown in the figure, due to the large steps on the surface of the substrate, bubbles are likely to be gene...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/16B05D1/00B05D3/02
CPCG03F7/16G03F7/168B05D1/005B05D3/0254B05D3/0209
Inventor 贺晓彬唐波李俊峰杨涛刘金彪
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI