Embedded multi-level SiC MOSFET driving circuit powered by single power supply

Abstract

The invention discloses a multi-level SiC MOSFET driving circuit powered by an embedded single power supply. The multi-level SiC MOSFET driving circuit comprises a driven SiC MOS transistor, a drivingchip, a resistor Rg, a diode D, a resistor Rc, a capacitor Cz, a diode Dz, an MOS transistor M and a resistor Rm. The driving circuit is driven by a quasi-4 level, and negative voltage is adopted atthe beginning of turn-off, so that the condition of mis-conduction caused by the turn-on of another SiC MOSFET of the bridge arm is avoided; zero voltage is adopted after turn-off is completed, so that the problem of SiC MOSFET failure caused by negative voltage spikes is avoided. In addition, a higher switching speed can be realized when the switch is turned on and off.

Description

technical field [0001] The invention belongs to the technical field of electronic driving, and in particular relates to a multilevel SiC MOSFET driving circuit. Background technique [0002] SiC MOSFETs can achieve very high switching speeds compared to Si MOSFETs. However, the driving voltage threshold of SiC MOSFET is low, and the ability to withstand negative voltage between gates is poor. In commonly used bridge-arm circuit configurations, the fast switching action of one switching device can crosstalk a very noticeable voltage spike on the gate voltage of the other switching device. Among them, the positive pressure spike is likely to cause false turn-on, and the negative pressure spike is likely to cause SiC MOSFET failure. [0003] At present, most common SiC MOSFET drive circuits use negative voltage shutdown to suppress false turn-on. However, negative voltage shutdown will increase the probability of device failure caused by negative voltage spikes, and it is nec...

AI Technical Summary

Problems solved by technology

Among them, positive pressure spikes are likely to cause false turn-on, and negative pressure spikes are likely to cause SiC MOSFET failure

[0003] At present, most common SiC MOSFET drive circuits use negative voltage shutdown to suppress false turn-on. However, negative voltage shutdown will increase the probability of device failure due to negative voltage spikes, and it is necessary to suppress crosstalk.

However, most of the driving circuits with crosstalk suppression function in the prior art are relatively complex and require multiple power supplies. There is an urgent need for a simple circuit to suppress crosstalk to maximize the potential performance of SiC MOSFETs

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