Nanogap electrode, method for producing same and nanodevice having nanogap electrode
A technology of nano-gap electrodes and manufacturing methods, which is applied in the direction of electric solid devices, nanotechnology for information processing, nanotechnology, etc., and can solve problems such as the miniaturization technology of semiconductor integrated circuits is approaching the limit
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no. 1 approach
[0076] The structure and manufacturing method of the nanogap electrode will be described with reference to the drawings.
[0077] 1-1 Structure of nano-gap electrodes
[0078] Figure 1A A top view of the nanogap electrode 100 according to the present embodiment is shown. Figure 1B An enlarged view of a region R surrounded by a dotted line is shown. Figure 1C Corresponding cross-sectional structures between A1 to A2 are shown. In the following description of the structure of the nanogap electrode 100, reference will be made to the above-mentioned figures.
[0079] In the nanogap electrode 100 , one end of the first electrode 102 a and one end of the second electrode 102 b are arranged facing each other with a gap. Figure 1A It shows a state where the first electrode 102a and the second electrode 102b are rectangular, and one end in the longitudinal direction of each is arranged facing each other and has a nanoscale gap. Figure 1BDetails of the gap portion of the nanogap...
no. 2 approach
[0149] This embodiment mode shows an example of a nanodevice using the nanogap electrode described in the first embodiment mode. The nanodevice 200a described in this embodiment mode has a structure that operates as a single-electric transistor.
[0150] 2-1 Structure of Nano Devices 1
[0151] Figure 6A A top view of a nanodevice 200a is shown, Figure 6B A cross-sectional structure corresponding to B1-B2 is shown. The nanodevice 200a includes a structure disposed on a substrate 110, including a first insulating layer 112, a nanogap electrode 100 (a first electrode 102a and a second electrode 102b), and a gap portion disposed adjacent to the nanogap electrode 100. The third electrode 102c and the fourth electrode 102d. The first electrode 102a includes a first electrode layer 104a and first metal particles 106a, and the second electrode 102b includes a second electrode layer 104b and second metal particles 106b. In this embodiment, the distance between the first metal p...
no. 3 approach
[0171] This embodiment mode shows an example of a nanodevice using the nanogap electrode described in the first embodiment mode. The nanodevice 200b described in this embodiment has a structure that operates as a logic operation device.
[0172] Figure 8A A top view of a nanodevice 200b implemented by a nanodevice is shown. Figure 8B shows the corresponding Figure 8A The cross-sectional structure between C1-C2 is shown. The nanodevice 200b according to this embodiment has a nanogap electrode 100 (first electrode 102a and second electrode 102b), metal nanoparticles 116 arranged in gaps (slits) of the nanogap electrode 100, and metal nanoparticles 116 for adjusting The third electrode 102c, the fourth electrode 102d and the fifth electrode 122 are charged. In the nano-device 200b, the first electrode 102a and the second electrode 102b can be used as source electrodes and drain electrodes. In addition, in the nano-device 200b, the third electrode 102c, the fourth electrod...
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Abstract
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