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A rare earth doped indium sulfide nanosheet/tio 2 Preparation method and product of composite photoanode film

A technology of rare earth doping and photoanode, which is applied in the direction of chemical instruments and methods, electrodes, chemical/physical processes, etc., can solve the problems of restricting wide application, achieve the effects of inhibiting recombination, improving absorption, and improving photoelectrochemical performance

Active Publication Date: 2021-11-30
NORTHWEST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to In 2 S 3 Its own photogenerated carriers are easy to recombine quickly, which limits its wide application

Method used

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  • A rare earth doped indium sulfide nanosheet/tio <sub>2</sub> Preparation method and product of composite photoanode film
  • A rare earth doped indium sulfide nanosheet/tio <sub>2</sub> Preparation method and product of composite photoanode film
  • A rare earth doped indium sulfide nanosheet/tio <sub>2</sub> Preparation method and product of composite photoanode film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] This embodiment prepares TiO 2 / β-In 2 S 3 :Yb 3+ -Tm 3+ Composite heterojunction structure photoelectrode thin film material, In 3+ :Yb 3 + :Tm 3+ =193:6:1; the raw materials used are shown in Table 1;

[0033] Table 1

[0034]

[0035] The preparation process is as follows:

[0036] (1) According to the molar ratio of butyl titanate: total absolute ethanol: deionized water: diethanolamine = 1:20:1:1, mix butyl titanate and half the amount of absolute ethanol at room temperature to obtain a solution A, the other half of anhydrous ethanol and deionized water were stirred and mixed at room temperature to obtain solution B, then mixed solution A and solution B, the mixed solution was milky white, continued to add diethanolamine until the solution became clear, and stirred at room temperature 4h, standing and aging for three days to form stable TiO 2 gel.

[0037] (2) with TiO 2 The gel is the coating precursor solution, and a layer of film is pulled on the...

Embodiment 2

[0042] With embodiment 1, the difference is that wherein indium chloride, thioacetamide, ytterbium nitrate, and the amount of thulium nitrate are respectively 0.9072mmol, 2.88mmol, 0.048mmol, 0.0048mmol, to ensure that In 3+ :Yb 3+ :Tm 3+ =189:10:1;S 2- The amount of the substance is 3 times the sum of the amount of all cationic substances, the concentration of indium chloride, ytterbium nitrate, and thulium nitrate is 24mM, and the concentration of thioacetamide is 72mM.

[0043] After testing, the composite film (YTS-3-TiO 2 ) under visible light greater than 420nm, the photocurrent density reaches 14.12μA / cm 2 , with In 2 S 3 -TiO 2 Compared with the photoelectrochemical performance of the composite film, the photoelectrochemical performance has been significantly improved, and the TiO 2 The photoelectrochemical performance in the visible part is about In 2 S 3 -TiO 2 Composite film (11.3μA / cm 2 ) 1.25 times that of pure TiO 2 Film (0.5μA / cm 2 ) 28.25 times.

Embodiment 3

[0045] With embodiment 1, the difference is that wherein indium chloride, thioacetamide, ytterbium nitrate, and the amount of thulium nitrate are respectively 0.9456mmol, 2.88mmol, 0.0096mmol, 0.0048mmol, to ensure that In 3+ :Yb 3+ :Tm 3+ =197:2:1;S 2- The amount of the substance is 3 times the sum of the amount of all cationic substances, the concentration of indium chloride, ytterbium nitrate, and thulium nitrate is 24mM, and the concentration of thioacetamide is 72mM.

[0046] After testing, the film (YTS-3-TiO 2 ) under visible light greater than 420nm, the photocurrent density reaches 15.36μA / cm 2 , with In 2 S 3 -TiO 2 Compared with the photoelectrochemical performance of the composite film, the photoelectrochemical performance has been significantly improved, and the TiO 2 The photoelectrochemical performance in the visible part is about In 2 S 3 -TiO 2 Composite film (11.3μA / cm 2 ) 1.36 times that of pure TiO 2 Film (0.5μA / cm 2 ) 30.73 times.

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Abstract

A Rare Earth Doped Indium Sulfide Nanosheet / TiO 2 The preparation method of the composite photoelectric anode film and its products include the following steps: mixing absolute ethanol and titanium source to obtain a solution and ethanol aqueous solution, adding diethanolamine, standing and aging to obtain titanium dioxide gel, and adopting the dipping and pulling method Prepare titanium dioxide film; dissolve thulium nitrate, ytterbium nitrate, indium source and sulfur source in deionized water to obtain a precursor solution, transfer it to a reaction kettle, place the titanium dioxide film against the reaction kettle, keep warm, cool, take out, and dry to obtain the obtained Rare earth doped indium sulfide nanosheets / TiO 2 Composite photoanode film materials. The present invention prepares composite films by doping thulium ions and ytterbium ions in indium sulfide nanosheets, and growing them in situ on the surface of titanium dioxide films, so that TiO 2 The photocurrent response of the thin film in the visible light band is greatly improved.

Description

technical field [0001] The invention relates to the technical field of photocatalysis / photoelectrocatalysis, in particular to a rare earth-doped indium sulfide nanosheet / TiO 2 Preparation method and product of composite photoelectric anode film. Background technique [0002] With the increasingly serious energy crisis, clean energy represented by solar energy has received widespread attention. Semiconductor titanium dioxide (TiO 2 ) have excellent photoelectrochemical properties, and are widely used in solar cells, photocatalytic degradation of pollutants, and photolysis of water. As an environmentally friendly and efficient semiconductor material, titanium dioxide material has good applications in the above fields, and is considered to be the most promising photovoltaic material. However TiO 2 The bandgap width of the film is (3.2eV), and its optical and electrical properties are poor. Only under the irradiation of ultraviolet light can the photovoltaic response be real...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/04C25B1/04C25B1/55C25B11/091C25B11/053
CPCB01J27/04B01J35/0033B01J35/004B01J35/023C25B1/04Y02E60/36
Inventor 苗慧李秋洁胡晓云樊君刘恩周成宇飞王佳伟张德恺张文婉
Owner NORTHWEST UNIV