Preparation method of semiconductor device

Abstract

The invention provides a method for preparing a semiconductor device, which includes providing a semiconductor substrate on which a gate, source and drain are formed, then forming an interlayer dielectric layer on the semiconductor substrate, and etching the interlayer dielectric Layers form contact holes, wherein the contact holes connected to the drain are strip-shaped, and at least part of the drain is exposed continuously, and the contact holes connected to the gate and source are in the form of points, and at least part of the gate and source are exposed intermittently. Then ions are obliquely implanted into the interlayer dielectric layer to ensure that ions in at least one direction are implanted into the drain electrode through the contact hole to form an ion implantation region. The present invention performs ion implantation through the contact hole in the interlayer dielectric layer to realize ESD protection. Compared with the prior art, a yellow light is made on the drain to define the ion implantation area before the interlayer dielectric layer, and the present invention reduces one step of photomask The process saves the cost of the process and is simple and easy to implement.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a semiconductor device. Background technique [0002] As semiconductor device technology continues to enter submicron and deep submicron, the reliability of ESD (electrostatic discharge) protection devices becomes more and more important. For MOS devices used as ESD protection, in order to achieve the purpose of internal circuit protection, the breakdown voltage of MOS devices used as ESD protection is often required to be slightly lower than the protected device, and the series resistance of the drain region is higher than that of the protected device. In order to achieve this goal, the method of increasing ion implantation (ESD implant) in the drain area is often used to reduce the breakdown voltage of the ESD device, but increasing the ion implantation in the drain area requires an additional mask, thus increasing the manufacturing co...

AI Technical Summary

Problems solved by technology

In order to achieve this goal, the method of increasing ion implantation (ESD implant) in the drain area is often used to reduce the breakdown voltage of the ESD device, but increasing the ion implantation in the drain area requires an additional mask, thus increasing the manufacturing cost

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