Insulated gate bipolar transistor, intelligent power device and electronic product

A technology of bipolar transistors and electronic products, applied in semiconductor devices, circuits, electrical components, etc., can solve the problems of source-drain withstand voltage reduction, gate control threshold voltage increase, etc., to reduce current and reduce conduction Voltage drop, the effect of reducing the probability of latch-up
CN112018172APending Publication Date: 2020-12-01GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD +1
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD
Publication Date
2020-12-01

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Abstract

The invention relates to the field of semiconductors, in particular to an insulated gate bipolar transistor, an intelligent power device and an electronic product. The insulated gate bipolar transistor comprises a drift region, a gate structure, an emitter, an emitter source region and a body region in contact with the emitter source region, wherein the top layer of the drift region is provided with a first trench and a second trench along the vertical direction of the device, the gate structure is filled in the first trench, the emitter is filled in the second trench, the emitter source region is arranged between the gate structure and the emitter, and the depth of the second trench is greater than the thickness of the emitter source region. A transverse electric field is formed between the gate structure and the emitter metal, the transverse electric field acts on the junction of the emitter source region and the body region to form a carrier collection layer, and the collection andstorage effects of carriers at the junction are enhanced, so that the current between the body region and the emitter source region is reduced, the conduction voltage drop is reduced, and the latch-upeffect occurrence probability is reduced.
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Description

technical field

[0001] The invention relates to the field of semiconductors, in particular to an insulated gate bipolar transistor, an intelligent power device and electronic products. Background technique

[0002] Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET). Its structure includes Gate G, emitter E and collector C. By applying a voltage to the gate G, the on-off between the collector C and the emitter E can be controlled. When no voltage is applied between the gate G and the emitter E, the collector C and the emitter E are disconnected; when a voltage of 15V (or threshold voltage) is applied between the gate G and the emitter E, the collector C and the Conduction between emitter E.

[0003] Insulated gate bipolar transistors have both the advantages of high input impedance of MOSFET devices and low turn-on vo...

Claims

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