Insulated gate bipolar transistor, intelligent power device and electronic product

A technology of bipolar transistors and electronic products, applied in semiconductor devices, circuits, electrical components, etc., can solve the problems of source-drain withstand voltage reduction, gate control threshold voltage increase, etc., to reduce current and reduce conduction Voltage drop, the effect of reducing the probability of latch-up

Pending Publication Date: 2020-12-01
GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

An increase in the doping concentration of the P region will reduce the channel resistance, but it will easily lead to a decrease in the source-drain withstand voltage and an increase in the gate control threshold voltage.

Method used

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  • Insulated gate bipolar transistor, intelligent power device and electronic product
  • Insulated gate bipolar transistor, intelligent power device and electronic product
  • Insulated gate bipolar transistor, intelligent power device and electronic product

Examples

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Embodiment Construction

[0028] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0029] It should be understood that the terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" may also be meant to include the plural forms unless the context clearly dictates otherwise. The terms "comprising", "comprising" and "having" are inclusive and thus indicate the presence of stated features, ele...

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PUM

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Abstract

The invention relates to the field of semiconductors, in particular to an insulated gate bipolar transistor, an intelligent power device and an electronic product. The insulated gate bipolar transistor comprises a drift region, a gate structure, an emitter, an emitter source region and a body region in contact with the emitter source region, wherein the top layer of the drift region is provided with a first trench and a second trench along the vertical direction of the device, the gate structure is filled in the first trench, the emitter is filled in the second trench, the emitter source region is arranged between the gate structure and the emitter, and the depth of the second trench is greater than the thickness of the emitter source region. A transverse electric field is formed between the gate structure and the emitter metal, the transverse electric field acts on the junction of the emitter source region and the body region to form a carrier collection layer, and the collection andstorage effects of carriers at the junction are enhanced, so that the current between the body region and the emitter source region is reduced, the conduction voltage drop is reduced, and the latch-upeffect occurrence probability is reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an insulated gate bipolar transistor, an intelligent power device and electronic products. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET). Its structure includes Gate G, emitter E and collector C. By applying a voltage to the gate G, the on-off between the collector C and the emitter E can be controlled. When no voltage is applied between the gate G and the emitter E, the collector C and the emitter E are disconnected; when a voltage of 15V (or threshold voltage) is applied between the gate G and the emitter E, the collector C and the Conduction between emitter E. [0003] Insulated gate bipolar transistors have both the advantages of high input impedance of MOSFET devices and low turn-on vo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/423H01L29/417
CPCH01L29/41708H01L29/4236H01L29/7396H01L29/7397
Inventor 刘利书
Owner GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD
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