A kind of thin film piezoelectric acoustic wave filter and its manufacturing method

A piezoelectric sound wave and manufacturing method technology, applied in the direction of electrical components, impedance networks, etc., can solve the problems of low reliability of the packaging process, thick cavity filter, poor cover stability, etc., to achieve low cost and reduced structural strength , the effect of size reduction

Active Publication Date: 2022-07-12
NINGBO SEMICON INT CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The technical problems to be solved by the present invention are: the thickness of the cavity-type filter is relatively thick, the reliability of the packaging process of the upper cavity formed by the upper cover is low, and the stability of the cover above the cavity is relatively poor

Method used

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  • A kind of thin film piezoelectric acoustic wave filter and its manufacturing method
  • A kind of thin film piezoelectric acoustic wave filter and its manufacturing method
  • A kind of thin film piezoelectric acoustic wave filter and its manufacturing method

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Embodiment 2

[0081] This embodiment provides a thin film piezoelectric acoustic wave resonator, Figure 13 A schematic diagram of the structure of the thin film piezoelectric acoustic wave resonator in this embodiment is shown, refer to Figure 13 , thin-film piezoelectric acoustic resonators include:

[0082] The first substrate 100, the upper surface of the first substrate 100 is provided with a plurality of mutually isolated first cavities 120a, and the mutually isolated parts of the adjacent first cavities 120a are made of semiconductor material;

[0083] The piezoelectric laminated structure is disposed on the upper surface of the first substrate 100 to cover the first cavity 120a, and the piezoelectric laminated structure includes a first electrode 102 and a piezoelectric layer stacked in sequence from bottom to top 103 and the second electrode 104;

[0084] The acoustic wave resonator unit is composed of the piezoelectric laminated structure above the first cavity 120a, and the bo...

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Abstract

The invention discloses a thin-film piezoelectric acoustic wave filter and a manufacturing method thereof, wherein the manufacturing method comprises: providing a first substrate, and a plurality of mutually isolated first cavities are formed on the upper surface of the first substrate; A first sacrificial layer is formed in the cavity, so that the upper surface of the first sacrificial layer is flush with the upper surface of the first substrate; a plurality of acoustic wave resonator units are formed, and each acoustic wave resonator unit includes sequentially formed on the first sacrificial layer. the first electrode, the piezoelectric layer and the second electrode, the boundary of each acoustic wave resonator unit is located within the boundary of a first cavity; a second sacrificial layer is formed above each acoustic wave resonator unit, so that the second sacrificial The boundary of the layer covers the boundary of the acoustic wave resonator unit, and the adjacent second sacrificial layers are isolated from each other; a cap layer body is formed to cover each second sacrificial layer and the mutually isolated area between the second sacrificial layers; the first sacrificial layer is removed A sacrificial layer and a second sacrificial layer.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a thin-film piezoelectric acoustic wave filter and a manufacturing method thereof. Background technique [0002] With the development of wireless communication technology, traditional single-band single-standard equipment can no longer meet the diverse requirements of communication systems. At present, the communication system is becoming more and more multi-frequency band, which requires that the communication terminal can accept various frequency bands to meet the requirements of different communication service providers and different regions. [0003] RF (radio frequency) filters are typically used to pass or block specific frequencies or frequency bands in RF signals. In order to meet the development needs of wireless communication technology, it is required that the RF filters used in communication terminals can meet the technical requirements of multi-band...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/54H03H3/02
CPCH03H9/54H03H3/02
Inventor 黄河
Owner NINGBO SEMICON INT CORP
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