Word line and bit line voltage conversion method and circuit and NAND flash memory

Abstract

The invention discloses a word line and bit line voltage conversion method, a word line and bit line voltage conversion circuit and a NOR flash memory. When an NOR FLASH needs to execute a certain operation and a corresponding word line or bit line needs to be biased to a high voltage, a charge pump provides a power supply voltage for the word line or bit line; when the NOR FLASH needs to switch the address of a word line or a bit line and the voltage of the current word line or bit line needs to be biased to a voltage lower than the current voltage, a stable voltage generation module providesa power supply voltage for the word line or bit line; a lower power supply voltage is provided for a word line or a bit line through the stable voltage generation module, so that the NAND flash memory can carry out safe address switching under a lower voltage, and the reliability problem generated by a high-voltage device is avoided; a lower power supply voltage is directly provided for a word line or a bit line through the stable voltage generation module, so that the problems of charge waste and charging and discharging time uncertainty caused by repeated charging / discharging of a capacitoron the word line or the bit line when the low voltage is biased traditionally are solved.

Description

technical field [0001] The invention relates to the technical field of non-type flash memory, in particular to a word line bit line voltage conversion method, circuit and non-type flash memory. Background technique [0002] NOR FLASH requires different high-voltage biases for word lines / bit lines / substrates during read / write / erase operations. figure 1 Some basic bias voltage requirements for operation are listed. With 2 as the basic NOR FLASH architecture. [0003] 1. Take the write operation as an example, because the bit line / word line of NOR FLASH needs a high-voltage bias during the write operation, so the corresponding bit / word line decoding and driving circuits are composed of high-voltage devices. When doing write operation and write detection operation, it is necessary to switch the bit / word line address continuously, so these decoding and driving circuits also need to switch continuously. The mainstream high-voltage device of NOR FLASH is a 5V device, so the switc...

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