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Low harmonic control system and method for three-level high switching frequency silicon carbide inverter

A switching frequency and control system technology, applied in the output power conversion device, the conversion of AC power input to DC power output, electrical components and other directions, can solve the serious dead zone effect, affecting the output power of the three-level silicon carbide inverter High quality, switching frequency, etc.

Active Publication Date: 2021-07-06
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in order to give full play to the advantages of silicon carbide power switching devices, the switching frequency of three-level silicon carbide inverters is usually high, resulting in serious dead zone effects, and the low-frequency harmonic content in the output current is large, which seriously affects the three-level silicon carbide inverter. Transformer output power quality

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  • Low harmonic control system and method for three-level high switching frequency silicon carbide inverter
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  • Low harmonic control system and method for three-level high switching frequency silicon carbide inverter

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Embodiment Construction

[0039] In the following, the present invention will be specifically described through exemplary embodiments. It should be understood, however, that elements, structures and characteristics of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0040] see figure 1 , a three-level high switching frequency silicon carbide inverter, its main circuit includes:

[0041] The upper DC bus, the voltage is V dc1 ;

[0042] The lower DC bus, the voltage is V dc2 , connected in series with the upper DC bus, and the midpoint between the upper DC bus and the lower DC bus is O;

[0043] The left bridge arm includes the first silicon carbide power switching device Q1, the second silicon carbide power switching device Q2 and the fourth silicon carbide diode D4 connected in series in sequence, the first silicon carbide power switching device Q1 and the second silicon carbide power switching device Q2 is connected through point M, point M is co...

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Abstract

The invention relates to a low harmonic control system and method for a three-level high switching frequency silicon carbide inverter. The low harmonic control system includes an amplitude adjustment module, a selection module, a modulation wave superposition module, an amplitude limitation module and a drive Signal generation module. The amplitude adjustment module adjusts the amplitude of the original modulation wave; the selection switch of the selection module judges the size of the original modulation wave and outputs different amplitude adjustments; the modulation wave adjustment module performs superposition operation on the modulated wave after amplitude adjustment; the amplitude limit The module limits the amplitude of the modulation wave obtained by each superimposition; the driving signal generating module is used to drive the silicon carbide power switching device in the main circuit. The main circuit of the three-level high switching frequency silicon carbide inverter contains two left and right bridge arms, and the isolation inductor is used to eliminate the mutual influence between the left and right bridge arms. The invention can effectively avoid the dead zone effect and reduce the output current harmonics of the three-level high switching frequency silicon carbide inverter.

Description

technical field [0001] The invention belongs to the technical field of power electronics and relates to inverter technology, in particular to a low harmonic control system and method for a three-level high switching frequency silicon carbide inverter. Background technique [0002] The use of silicon carbide power switches in the three-level inverter can work at a higher switching frequency, reduce the weight and volume of the passive filter, and further improve the efficiency and power density of the inverter. In traditional modulation methods, in order to prevent shoot-through short circuits in three-level inverters, it is necessary to add a turn-on delay between complementary power switching devices to add a dead zone, that is, a period of time when the complementary switching devices are all off. But the addition of the dead zone will produce a corresponding dead zone effect, causing the output current to contain low-frequency harmonics. [0003] The dead zone effect is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/483H02M1/38H02M1/12
CPCH02M1/12H02M1/38H02M7/483H02M1/385Y02B70/10
Inventor 严庆增肖浪涛周赞嵘吴明铂张鑫诚廉伟城徐海亮赵仁德
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)