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Dual-carrier modulation method for suppressing low-frequency harmonics of high switching frequency silicon carbide inverters

A dual-carrier modulation and switching frequency technology is applied in the direction of output power conversion device, AC power input conversion to DC power output, high-efficiency power electronic conversion, etc., to eliminate error pulses, suppress low-frequency current harmonics, and avoid direct short circuits. Effect

Active Publication Date: 2021-05-11
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the higher the switching frequency, the more serious the low-frequency current harmonics caused by the dead zone

Method used

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  • Dual-carrier modulation method for suppressing low-frequency harmonics of high switching frequency silicon carbide inverters
  • Dual-carrier modulation method for suppressing low-frequency harmonics of high switching frequency silicon carbide inverters
  • Dual-carrier modulation method for suppressing low-frequency harmonics of high switching frequency silicon carbide inverters

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Embodiment Construction

[0043] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely below with reference to the accompanying drawings in the embodiments of the present invention.

[0044] see figure 1 , in the high switching frequency SiC inverter main circuit topology, V dc and C dc are the DC bus voltage and DC bus capacitance of the high switching frequency SiC inverter, respectively; Q a + , Q a – , Q b + , Q b – , Q c + , Q c – For six silicon carbide power switching devices; S a + , S a – , S b + , S b – , S c + , S c – are the driving signals of six silicon carbide power switching devices; CS a , CS b , CS c It is a three-phase current sensor, used to measure the three-phase output current i a , i b , i c ;L a , L b , L c is the three-phase filter inductor; R a , R b , R c is the three-p...

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Abstract

The invention discloses a low-frequency harmonic suppression modulation method for a high switching frequency silicon carbide inverter. The main circuit is connected with a dual-carrier modulation module and a current polarity extraction module for suppressing low-frequency harmonics. The three-phase output current in the main circuit is input to the The current polarity extraction module obtains the three-phase fundamental current, the three-phase fundamental current and the three-phase modulation wave are input to the dual-carrier modulation module that suppresses low-frequency harmonics, and the module outputs the driving signals of six silicon carbide power switching devices to the main The circuit constitutes the entire control loop of the dual-carrier modulation method for suppressing the low frequency harmonics of the high switching frequency silicon carbide inverter. The drive signal is obtained by comparing the dual carrier wave with the modulated wave, and a drive blank area is added between the drive signals of the upper and lower tubes. There is no need to add an additional turn-on delay link to obtain a dead zone. There is no delay link caused by the turn-on delay in the control loop. The current polarity extraction module is added to change the amplitude of the dual carrier according to the current polarity to achieve the purpose of suppressing the low-frequency harmonics of the high switching frequency silicon carbide inverter.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a dual-carrier modulation method for suppressing low-frequency harmonics of a silicon carbide inverter with a high switching frequency. Background technique [0002] The switching frequency of the silicon carbide power switching device can be greater than 100kHz, which can further improve the power density of the inverter and reduce the overall volume of the inverter. If the traditional modulation method with dead zone is used, the output voltage will generate error voltage pulses related to the current direction, which will cause the output current to contain 5th, 7th and other low-frequency current harmonics. In the traditional modulation method, the driving signal is generally obtained by comparing a single carrier wave with the modulated wave. In order to prevent the SiC inverter from having a direct short-circuit fault, a dead zone is usually added between the dri...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/12H02M1/38H02M7/537
CPCH02M1/12H02M1/38H02M7/537Y02B70/10
Inventor 严庆增肖浪涛孙鹏霄赵仁德徐海亮
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)