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6T unit-based storage unit, storage array and in-memory computing device

A storage unit and computing device technology, applied in the direction of information storage, static memory, digital memory information, etc., can solve the problems of output bit line leakage, increased process cost, low efficiency, etc.

Active Publication Date: 2020-12-25
中科南京智能技术研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The traditional calculation method of single-bit input multiplied by single-bit weight is inefficient, and has no comparative advantage in calculation throughput; the use of 8T structure for weight storage will increase the process cost; consumption problem

Method used

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Embodiment Construction

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0034] The object of the present invention is to provide a storage unit, a storage array and an in-memory computing device based on a 6T unit to improve energy efficiency.

[0035] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0036] like Figure 1-2 As shown, the ...

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Abstract

The present invention relates to a 6T unit-based storage unit. The storage unit comprises a PMOS transistor T1, a PMOS transistor T2, an NMOS transistor T3, an NMOS transistor T4, an NMOS transistor T5, an NMOS transistor T6, an NMOS transistor T7, an NMOS transistor T8, an NMOS transistor T9, an NMOS transistor T10, a capacitor C_U, a capacitor C_D, a word line WL, a bit line BL, a bit line BLB,a bit reading line RBL_L, a computing word line CWL_U, a differential signal end CWLB_U, a computing word line CWL_D, a differential signal end CWLB_D and a bit reading line RBL_R. The circuit is conducted only when the voltages at the two ends of the capacitor are changed in the calculation process, the power consumption is saved through a capacitance coupling calculation mode, and the energy efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of in-memory computing, in particular to a storage unit based on a 6T unit, a storage array and an in-memory computing device. Background technique [0002] Deep neural networks (DNNs) and convolutional neural networks (CNNs) have achieved unprecedented improvements in the accuracy of large-scale recognition tasks. In order to solve the problem of algorithm complexity and memory access limitation, in recent algorithms, weights and neuron activations are binarized as +1 or −1, so that the multiplication between weights and input activations becomes an XNOR operation, and the accumulation of XNOR operations becomes the number of bits of these XNOR results. [0003] However, when performing XNOR operations, the traditional on-chip static random access memory SRAM needs to be accessed row by row, and the throughput is low. [0004] The traditional calculation method of single-bit input multiplied by single-bit...

Claims

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Application Information

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IPC IPC(8): G11C11/413G11C11/41G11C11/414G11C11/416
CPCG11C11/41G11C11/413G11C11/414G11C11/416
Inventor 乔树山史万武尚德龙周玉梅
Owner 中科南京智能技术研究院
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