Transmission electron microscope sample and its preparation method, failure analysis method of the structure to be tested
A technique of transmission electron microscopy and the structure to be measured, which is applied in the direction of material analysis using radiation, material analysis using wave/particle radiation, and material analysis, etc. It can solve the problem that the thickness uniformity of the deformed area varies greatly and the sample cannot meet the requirements of transmission electron microscopy analysis. and other problems to achieve the effect of reducing deformation
Active Publication Date: 2021-12-28
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
[0003] In related technologies, during the sample preparation process, due to the continuous reduction of the thickness of the sample, usually when the thickness of the sample is less than 150nm, the sample will be deformed due to stress problems, and then further thinned by using Focused Lon Beam (FIB). When the sample is deformed, the thickness uniformity of the deformed area varies greatly, which eventually leads to the formation of the sample that cannot meet the requirements of the transmission electron microscope analysis
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preparation example Construction
[0077] figure 2 Schematic diagram of the implementation process of the preparation method of the transmission electron microscope sample provided by the embodiment of the present application, such as figure 2 As shown, the method includes the following steps:
[0078] Step S201, determining a test area in the structure to be tested.
[0079] Here, the structure to be tested may be any structure that needs to be tested, for example, a laminated structure or other structures; the test area is a part of the structure to be tested. Firstly, the structure to be tested is stripped from the entire device through a focused ion beam system; secondly, the stripped structure to be tested is pasted on a sample preparation stage, where the sample preparation stage can be a copper grid. Such as Figure 3A As shown, it is a schematic diagram of the structure to be tested fixed on the sample preparation platform provided by the embodiment of the present application. It can be seen that t...
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The embodiment of the present application discloses a transmission electron microscope sample and its preparation method, and a failure analysis method of the structure to be tested, wherein, the preparation method of the transmission electron microscope sample includes: determining the test area in the structure to be tested; Determine the structure to be analyzed and the structure to be removed, the two ends of the structure to be analyzed along the first direction have a first preset distance from the edge of the test area, and the structure to be removed is located along the first direction of the structure to be analyzed In the projection area of the two directions, the side of the structure to be analyzed facing the second direction is in contact with the structure to be removed, and the angle between the first direction and the second direction is greater than 0° and less than 180° °; removing the structure to be removed, and retaining at least part of the test area located on both sides of the structure to be removed in the first direction as a support structure to obtain a transmission electron microscope sample, wherein the support structure and the The structure to be analyzed forms at least one U-shaped bracket integrally formed.
Description
technical field [0001] The embodiments of the present application relate to the field of semiconductor technology, and relate to, but are not limited to, a transmission electron microscope sample, a preparation method thereof, and a failure analysis method of a structure to be tested. Background technique [0002] When performing microscopic physical structure observation, critical dimension measurement, and elemental analysis on a wafer with a three-dimensional flash memory structure, it is usually necessary to use a concentrated ion beam-scanning electron beam dual system to prepare a Transmission Electron Microscope (TEM) sample. In the sample preparation process, the sample containing the target area is first peeled off from the wafer, and pasted on the side of the copper grid (Grid) of the sample preparation table, and finally the sample is precisely thinned to make the thickness of the sample meet the requirements of transmission. Thickness (less than 100nm) requiremen...
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IPC IPC(8): G01N23/20008G01N23/04
CPCG01N23/20008G01N23/04
Inventor 郭伟
Owner YANGTZE MEMORY TECH CO LTD