Integrated circuit internal short circuit failure positioning method based on liquid crystal phase change

Abstract

The invention discloses an integrated circuit internal short circuit failure lossless positioning method based on liquid crystal phase change. The method comprises the following steps of spraying a liquid crystal solution film on the surface of an integrated circuit chip, adding a polarized light lens at a light outlet of a microscope light source, adding a rotatable polarized light lens at an incident port of an objective lens, adjusting the angle of the objective lens polarized light lens, and conducting fixation when darkest light is observed from the eyepiece, attaching a heating plate tothe upper surface of the microscope objective table, placing the integrated circuit chip on the heating plate on the surface of the microscope objective table, placing the microscope objective table under the irradiation of a microscope polarized light source, and adjusting the microscope to enable a clear image of the integrated circuit chip to be presented in the eyepiece, providing electric signal excitation for the integrated circuit chip, so that an electric signal flows through an observation area, and gradually increasing the intensity of an electric excitation signal, observing the condition of a darkening area on the surface of the chip through the eyepiece, and taking an abnormal darkening area as an electric leakage area. Lossless positioning of internal short circuit failure ofthe integrated circuit chip is achieved, and the method has the advantages of being easy and convenient to operate and low in cost.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit failure location, and in particular relates to a method for nondestructive location of integrated circuit internal short circuit failure based on liquid crystal phase transition. Background technique [0002] At present, two methods are generally used when locating the internal short circuit failure of integrated circuits: one is to expose the internal structure of the chip layer by layer through physical grinding and etching, and observe the abnormal area of ​​the internal structure to locate the failure point; the other is to use EMMI microscope Observe the abnormal leakage area to locate the failure point. The first method is destructive to the failed sample and requires high operation accuracy. Misoperation may cause the failure point to be destroyed and affect the failure location result; the second method requires high equipment capability and high cost. Contents of the inventio...

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is: a non-destructive positioning method for internal short-circuit failure of integrated circuits based on liquid crystal phase transition, to solve the high cost of internal short-circuit failure...

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