a semiconductor device
A semiconductor and device technology, applied in the field of semiconductor devices, can solve problems such as device failure
Active Publication Date: 2021-09-24
YANGTZE MEMORY TECH CO LTD
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- Description
- Claims
- Application Information
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Problems solved by technology
[0004] In view of this, the present invention provides a semiconductor device to solve the problem that devices in the prior art are prone to failure
Method used
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Embodiment Construction
[0031] As mentioned in the background art section, in the prior art, during the manufacturing process of semiconductor devices, the problem of device failure is prone to occur.
[0032] The inventor found that the reason for the above phenomenon after research is: taking 3D NAND as an example, such as figure 1 As shown, it is a schematic diagram of the top view structure of 3D NAND; after the channel structure CH and the top selection gate TSG slit 01 are fabricated, the substrate structure is obtained, and then photolithography is required at the preset position between the channel structures to be formed. and dry etching to form a gate line spacer structure extending along the first direction X direction (for the convenience of subsequent description, the spacer structure is marked with GL in this application), and then fill the spacer structure with metal to form a gate line Gate Line.
[0033] However, during the metal filling process, since the gate line spacer structure...
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The present application provides a semiconductor device, including a substrate, a stack structure on the substrate, and a gate line spacer structure passing through the stack structure, wherein the gate line spacer structure has a side wall, and the side wall is a curved surface . Since the gate line spacer structure in semiconductor devices is usually produced by an etching process and has a large aspect ratio, the side wall of the gate line spacer structure is subjected to material stress and is perpendicular to the surface where the side wall of the gate line spacer structure is located. , the side wall of the grid line spacer structure on the curved surface makes the stress directions on the side wall of the grid line spacer structure have multiple directions, so as to avoid the side wall of the linear grid line spacer structure from being subjected to a single direction of stress and deformation of the grid line spacer structure Or tilting, twisting and other problems, resulting in the subsequent metal filling process, the metal filling is not in place, resulting in an open circuit, which in turn leads to the failure of the semiconductor device.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a semiconductor device. Background technique [0002] Three-dimensional memory (3D NAND) is an emerging memory type that solves the limitations of 2D or planar NAND flash memory by stacking memory particles together. Instead of placing memory chips on a single side, 3D NAND technology stacks multiple layers of data storage cells vertically. Based on this technology, storage devices with a storage capacity several times higher than similar NAND technologies can be created. The technology enables higher storage capacity in a smaller footprint, resulting in significant cost savings, reduced power consumption, and dramatic performance gains for many consumer mobile devices and the most demanding enterprise deployments demand. [0003] In the manufacturing process of semiconductor devices, the problem of device failure is prone to occur. Contents of the invention ...
Claims
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IPC IPC(8): H01L27/11519H01L27/11524H01L27/11556H01L27/11565H01L27/1157H01L27/11582H10B41/10H10B41/27H10B41/35H10B43/10H10B43/27H10B43/35
CPCH10B41/10H10B41/35H10B43/10H10B41/27H10B43/35H10B43/27
Inventor 陆聪郭芳芳卢绍祥曾森茂李昀朋郝蓓李俊文
Owner YANGTZE MEMORY TECH CO LTD