Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A single-photon detector, superconducting wire technology, applied in the field of light detection, can solve problems affecting device performance, current crowding effect, etc.
Active Publication Date: 2021-01-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF4 Cites 1 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0009] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a single photon detector and its preparation method, which are used to solve the "current crowding effect" at the corner that cannot be essentially solved in the prior art, and which affects the device Performance and other issues
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0050] Such as Figure 1 ~ Figure 3 As shown, the present embodiment provides a single photon detector 1, and the single photon detector includes:
[0051] Substrate 11 and superconducting wire 12.
[0052] Such as image 3 As shown, the substrate 11 is located at the bottom of the single photon detector 1 .
[0053] Specifically, the substrate 11 includes but is not limited to a silicon substrate, a MgO substrate or a sapphire substrate. As an example, the substrate 11 is a silicon substrate.
[0054] Such as Figure 1 ~ Figure 3 As shown, the superconducting wire 12 is formed on the substrate 11 , and the superconducting wire 12 includes a plurality of straight portions 121 and corner portions 122 connecting the straight portions 121 .
[0055] Specifically, the material of the superconducting wire includes but is not limited to NbN, Nb, NbSi, WSi, TaN, MoSi or NbTiN. As an example, the superconducting wire is made of NbN. The superconducting wire 12 is a superconductin...
Embodiment 2
[0064] Such as Figure 10 As shown, this embodiment provides a preparation method of the single photon detector of the first embodiment, the preparation method of the single photon detector includes:
[0065] 1) A substrate 11 is provided, and a first superconducting thin film is grown on the surface of the substrate 11 .
[0066] Specifically, a substrate 11 is firstly provided, and a first superconducting thin film (NbN material is selected in this embodiment) for preparing SNSPD is grown on the front surface of the substrate 11 by using a high vacuum magnetron sputtering device.
[0067] 2) Spin-coat photoresist on the first superconducting thin film, expose the corner area of the superconducting wire through exposure and development, and remove the oxide layer on the surface of the corner area.
[0068] Specifically, in this embodiment, it also includes spin-coating electron beam exposure glue PMMA (that is, photoresist) on the surface of the first superconducting thin ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Property
Measurement
Unit
current density
aaaaa
aaaaa
current density
aaaaa
aaaaa
Login to view more
Abstract
The invention provides a single-photon detector and a preparation method, the single-photon detector comprises a substrate and a superconducting wire formed on the substrate, and the superconducting wire comprises a plurality of straight line parts and corner parts connected with the straight line parts, wherein the thickness of the corner part of the superconducting wire is greater than that of the straight line part. According to the single-photon detector and the preparation method, the thickness of the corner part of the superconducting wire is increased (greater than the thickness of thestraight line part), so that the critical current of the corner area is increased. Although the corner part of the superconducting wire still has a current crowding effect, the corner area is no longer a bottleneck for limiting the critical current of the whole superconducting wire because the overall critical current of the corner area is increased to be higher than the critical current level ofthe straight line part, thereby achieving the purpose of inhibiting adverse effects caused by the current crowding effect of the corner area.
Description
technical field [0001] The invention relates to the technical field of light detection, in particular to a single photon detector and a preparation method. Background technique [0002] As a new single-photon detection technology, superconducting nanowire single-photon detector (SNSPD) has significantly better performance than other known ones in terms of detection efficiency, dark count rate, time jitter and maximum count rate. light detector. At present, SNSPD plays an important role in the fields of quantum optics, single photon ranging imaging and quantum key distribution. [0003] The system detection efficiency (SDE) of SNSPD can usually be expressed as SDE=η coup ×η abs ×η ide , where η coup is the optical coupling efficiency, η abs is the photon absorption efficiency, η ide is the intrinsic detection efficiency. In order to receive incident photons to the maximum extent, the η of SNSPD should be increased coup , the photosensitive surface of SNSPD (15-20 μm ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/44B82Y15/00B82Y40/00
CPCG01J1/44B82Y15/00B82Y40/00G01J2001/442
Inventor 张伟君熊佳敏尤立星王镇谢晓明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Login to view more