A gallium nitride-based epitaxial structure and its preparation method
An epitaxial structure, gallium nitride-based technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems affecting the stability and reliability of radio frequency devices, deteriorating interface quality, and poor overall uniformity. The effect of accelerating the lateral migration rate, improving the interface performance and reducing the loss
Active Publication Date: 2021-03-02
CEC COMPOUND SEMICON CO LTD
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, due to the large binding energy of Al atoms, it is difficult to migrate on the epitaxial surface, and the temperature of the generally grown AlN insertion layer is low, resulting in a decrease in interface quality and poor overall uniformity, which affects the stability and reliability of radio frequency devices.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0056] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, in the case of no conflict, the following embodiments and features in the embodiments can be combined with each other. It should also be understood that the terminology used in the embodiments of the present invention is for describing specific implementations, not for limiting the protection scope of the present invention. The test methods for which specific conditions are not indicated in the following example...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention provides a method for preparing a gallium nitride-based epitaxial structure, comprising: providing a substrate, performing pretreatment on the substrate, and growing an aluminum nitride buffer layer on the substrate; Growth of Al on the Al buffer layer x Ga 1‑x N buffer layer; in the Al x Ga 1‑x A gallium nitride withstand voltage layer is grown on the N buffer layer; a gallium nitride channel layer is grown on the gallium nitride withstand voltage layer; an indium-assisted growth Al is grown on the gallium nitride channel layer y Ga 1‑y N insertion layer; in the Al y Ga 1‑y Indium assisted growth of Al on N insertion layer z Ga 1‑z N barrier layer; and in the Al z Ga 1‑z A gallium nitride capping layer is grown on the N barrier layer. The electron mobility of the gallium nitride-based epitaxial structure prepared by the above preparation method is greatly improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a gallium nitride-based epitaxial structure and a preparation method thereof. Background technique [0002] Gallium nitride (GaN), as a representative of wide bandgap semiconductor materials, has the characteristics of large bandgap, high electron saturation drift velocity, high critical breakdown field strength, high thermal conductivity, good stability, corrosion resistance, radiation resistance, etc. , so gallium nitride has high application value in the fields of high temperature, high frequency and high power microwave devices. In addition, GaN can form an AlGaN / GaN heterostructure with aluminum gallium nitride (AlGaN) due to its excellent electronic properties. The heterostructure interface has a high two-dimensional electron gas (2D EG) density, while 2D EG As the conduction channel in HEMT devices determines the electrical properties of GaN devices, therefo...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/335H01L29/778H01L29/20H01L29/205H01L29/207
CPCH01L21/02381H01L21/02458H01L21/0254H01L29/2003H01L29/205H01L29/207H01L29/66462H01L29/7786
Inventor 唐军冯欢欢
Owner CEC COMPOUND SEMICON CO LTD