Non-volatile read-only memory and preparation method thereof
A read-only memory, non-volatile technology, used in static memory, digital memory information, information storage, etc., can solve problems such as incompatibility, and achieve the effect of realizing storage functions
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example 1
[0034] Example 1: Demonstration of a single memory device with 1-bit memory space
[0035] 1): A silicon dioxide / silicon substrate is selected as a substrate, on which a 5nm layer of platinum (Pt) is deposited as a buffer layer by electron beam deposition.
[0036] Select a silicon dioxide / silicon substrate of a suitable size, clean it, choose a clean vessel, first soak it in deionized water, use an ultrasonic cleaner to clean it at the maximum power for one minute, and blow it with a nitrogen gun after taking it out dry; then soak it in absolute ethanol, use an ultrasonic cleaner to clean it at maximum power for half a minute, take it out and blow it dry with a nitrogen gun; finally soak it in pure acetone, use an ultrasonic cleaner to clean it at maximum power for half a minute Minutes, take it out and blow it dry with a nitrogen gun.
[0037] Using an electron beam deposition system, a layer of Pt with a thickness of 5 nm was deposited on the entire substrate, and the vacu...
example 2
[0046] Example 2: Preparation of non-volatile read-only memory with 1024bit storage space.
[0047] 1): A silicon dioxide / silicon substrate is selected as a substrate, on which a 5nm layer of platinum (Pt) is deposited as a buffer layer by electron beam deposition.
[0048] Select a silicon dioxide / silicon substrate of a suitable size, clean it, choose a clean vessel, first soak it in deionized water, use an ultrasonic cleaner to clean it at the maximum power for one minute, and blow it with a nitrogen gun after taking it out dry; then soak it in absolute ethanol, use an ultrasonic cleaner to clean it at maximum power for half a minute, take it out and blow it dry with a nitrogen gun; finally soak it in pure acetone, use an ultrasonic cleaner to clean it at maximum power for half a minute Minutes, take it out and blow it dry with a nitrogen gun.
[0049] Using an electron beam deposition system, a layer of Pt with a thickness of 5 nm was deposited on the entire substrate, and...
example 3
[0059] Example 3: Preparation of non-volatile read-only memory with 1024bit storage space read by MJT.
[0060] 1): Electron beam lithography is performed on the silicon dioxide / silicon substrate on which the bottom electrode has been prepared, and a 32×32 window array is opened. The window size is required to be 120nm×120nm, and the interval between each window is 40nm. Then a layer of 5nm platinum (Pt) was deposited as a buffer layer by electron beam lithography.
[0061] Select a silicon dioxide / silicon substrate with a suitable size, and it is required that the sinking bottom has been prepared with a bottom electrode for subsequent testing. To clean the substrate, select a clean vessel, first soak it in deionized water, use an ultrasonic cleaner to clean it at the maximum power for one minute, take it out and blow it dry with a nitrogen gun; then soak it in absolute ethanol, Use an ultrasonic cleaner to clean it at maximum power for half a minute, take it out and blow it ...
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Abstract
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