Plasma etching equipment

Abstract

The invention discloses plasma etching equipment. The plasma etching equipment comprises a reaction chamber, a lower electrode assembly, mounting substrate, a fixing part, a connecting part, a drivingdevice, and a first corrugated pipe; a first opening is formed in the top of the reaction chamber; the lower electrode assembly is located at the bottom of the interior of the reaction chamber; the lower electrode assembly comprises a bearing surface used for bearing a to-be-processed substrate; the mounting substrate is located in the first opening, and a gap is formed between the mounting substrate and the side wall of the first opening; the fixing part is positioned outside the top of the reaction chamber, and a second opening is formed in the fixing part; the connecting part penetrates through the second opening, a gap is formed between the connecting part and the side wall of the second opening, the connecting part comprises a first end and a second end which are opposite to each other, and the first end is connected with the mounting substrate; the driving device is connected with the second end and can drive the mounting substrate to move in the direction perpendicular to the bearing surface; the first corrugated pipe surrounds the connecting part and is used for maintaining the reaction chamber to be a closed space. The plasma etching equipment can meet different process requirements.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a plasma etching device. Background technique [0002] In the semiconductor process, the process of etching the semiconductor material generally includes a dry etching process or a wet etching process, wherein, since the dry etching process using plasma for etching can effectively control the size of the etching opening The size has become the most mainstream etching process at present. Existing processes usually use glow discharge, radio frequency signal, corona discharge, etc. to form plasma. Among them, when using radio frequency signals to form plasma, the density and energy of the formed plasma can be controlled by adjusting the processing gas composition, frequency of radio frequency power, coupling mode of radio frequency power, air pressure, temperature and other parameters, so as to optimize the plasma treatment effect . Therefore, in existing semiconductor etching devic...

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Problems solved by technology

[0004] However, the distance between the upper electrode and the lower electrode of the existing capacitively coupled plasma etching device is fixed, making it difficult for the capacitively coupled plasma etching device to meet different process requirements

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