Etching solution composition

A technology of etching solution and composition, which is applied in the manufacture of display devices, the field of etching solution composition of copper film and molybdenum film, can solve the problems of increased critical dimension loss, incomplete step coverage, poor data opening, etc., and achieve high Number of sheets to be processed, long shelf life, over-etching suppression effect

Pending Publication Date: 2021-02-09
ENF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this case, there are serious problems in that molybdenum residues are highly likely to remain, the step coverage of the subsequent film is incomplete and data opening defects are induced, and molybdenum (Mo) is partially passivated. This leads to the formation of residues, resulting in defective pixels, etc.
However, in this case, if the concentration of metal ions in the etchant increases above a certain level as in the case of an increase in the number of sheets to be processed or large-area processing, there is a problem that the critical dimension loss (Critical Dimension loss) of the etch profile will increase.

Method used

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Examples

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Effect test

Embodiment 1 to Embodiment 13 and comparative example 1 to comparative example 9

[0134] An etching solution composition (100 g) was prepared according to the components and contents described in Table 1 below.

[0135] 【Table 1】

[0136]

[0137]

[0138]

[0139] 【Table 2】

[0140]

[0141]

[0142] 【table 3】

[0143]

[0144] As shown in the above-mentioned Table 2, it was confirmed that the etching solution composition according to the present invention simultaneously etches the copper film and the molybdenum-containing film together, and can achieve a suitable etching rate and etching deviation. In addition, it was confirmed that a good taper angle and linearity can be achieved even when they are etched together.

[0145] It was confirmed that the etching liquid composition according to the present invention can achieve a remarkable etching rate for the copper film despite having a pH of 4 or more. In addition, it was confirmed that a better taper angle can be formed as the fluorine-based compound is further included.

[0146] Fur...

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Abstract

The present invention relates to an etchant composition for selectively etching a copper film and a molybdenum-containing film used as electrodes of a TFT LCD display; according to the present invention, it is possible to provide an etchant composition for a copper film and a molybdenum-containing film, the etchant composition being capable of selectively etching a copper film and a molybdenum-containing film, and providing an etching solution for a TFT LCD display by easily controlling the etching speed. According to the present invention, it is possible to provide a metal wiring having a straight line and a taper angle of a target pattern, and to achieve a stable etching profile, thereby not only achieving a high number of sheets to be processed, but also being effective for large-area processing.

Description

technical field [0001] The present invention relates to the etchant composition that is used for the etching of copper film and molybdenum-containing film, particularly, relates to the etchant composition that selectively etches the copper film that is used as the electrode of TFT-LCD display and molybdenum-containing film and utilizes it A method of manufacturing a display device. Background technique [0002] In a TFT-LCD display device, the resistance of metal wiring is the main factor that induces RC signal delay. Therefore, obtaining low-resistance metal wiring is the key to achieving increased panel size and high resolution. In the prior art, chromium, molybdenum, and aluminum niobium used as materials for metal wiring Or their alloys have limitations when used as gate electrodes, gate electrodes, data wiring, etc. used in large TFT-LCDs due to their high electrical resistance. [0003] In connection with this, copper (Cu), which has significantly lower resistanc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/44H01L21/3213
CPCC23F1/44H01L21/32134C09K13/06H01L21/30604H01L21/31111
Inventor 朴相承金益儁金载烨李宝研金世训
Owner ENF TECH
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