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Heat flow-based power semiconductor device characteristic frequency extraction method and system

A technology of power semiconductor and characteristic frequency, which is applied in the field of characteristic frequency extraction of power semiconductor devices based on heat flow, can solve the problems of inability to guarantee accuracy, complexity, and there is no unified extraction method for characteristic frequency parameters of frequency domain thermal impedance model, so as to achieve simplified parameters Extraction process, high accuracy, guaranteed effectiveness

Pending Publication Date: 2021-02-09
SHANGHAI JIAO TONG UNIV
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Problems solved by technology

However, there is no unified extraction method for the most critical characteristic frequency parameters in the frequency domain thermal impedance model
Existing methods are very complex and cannot guarantee accuracy

Method used

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  • Heat flow-based power semiconductor device characteristic frequency extraction method and system
  • Heat flow-based power semiconductor device characteristic frequency extraction method and system
  • Heat flow-based power semiconductor device characteristic frequency extraction method and system

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Embodiment Construction

[0042] The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0043] figure 1 It is a flowchart of a method for extracting characteristic frequencies of power semiconductor devices based on heat flow in an embodiment of the present invention.

[0044] refer to figure 1 As shown, the method for extracting the characteristic frequency of power semiconductor devices based on heat flow in this embodiment includes the following steps:

[0045] S100, applying a step loss to the power semiconductor device, recording the thermal impedance curve and the output heat flow ...

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Abstract

The invention provides a heat flow-based power semiconductor device characteristic frequency extraction method, which comprises the steps of applying step loss to a power semiconductor device, and recording a time domain thermal impedance curve and an output heat flow curve of the device; carrying out frequency domain conversion on the time domain thermal impedance curve to obtain a frequency domain thermal impedance model and the characteristic frequency number and interval thereof; fitting the time domain output heat flow curve in combination with the characteristic frequency of the frequency domain thermal impedance model, and extracting the characteristic frequency value of the power semiconductor device; furthermore, carrying out curve fitting on the time domain thermal impedance curve. The accuracy of the characteristic frequency of the frequency domain thermal impedance model is improved. Correspondingly, the invention further provides a system corresponding to the method, a terminal and a medium. According to the method and system, the parameter extraction process of the frequency domain thermal impedance model is simplified, and the parameter accuracy is improved.

Description

technical field [0001] The present invention relates to the technical field of power electronics, in particular to a method, system, terminal and medium for extracting characteristic frequencies of power semiconductor devices based on heat flow. Background technique [0002] Whether the temperature characteristics of power semiconductor devices can be accurately predicted in practical applications is an important basis for improving the reliability of power electronic systems. In recent years, the frequency domain thermal impedance model is gradually attracting people's attention, because compared with the traditional Foster and Cauer model, it can accurately predict the temperature characteristics of power semiconductor devices in the whole frequency band. However, there is no uniform extraction method for the most critical characteristic frequency parameters in the frequency-domain thermal impedance model. Existing methods are very complex and cannot guarantee accuracy. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/20G06Q10/04G06F119/08
CPCG06F30/20G06Q10/04G06F2119/08
Inventor 马柯徐梦琦
Owner SHANGHAI JIAO TONG UNIV
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