Heat flow-based power semiconductor device characteristic frequency extraction method and system

A technology of power semiconductor and characteristic frequency, which is applied in the field of characteristic frequency extraction of power semiconductor devices based on heat flow, can solve the problems of inability to guarantee accuracy, complexity, and there is no unified extraction method for characteristic frequency parameters of frequency domain thermal impedance model, so as to achieve simplified parameters Extraction process, high accuracy, guaranteed effectiveness
CN112347614APending Publication Date: 2021-02-09SHANGHAI JIAO TONG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI JIAO TONG UNIV
Publication Date
2021-02-09

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Abstract

The invention provides a heat flow-based power semiconductor device characteristic frequency extraction method, which comprises the steps of applying step loss to a power semiconductor device, and recording a time domain thermal impedance curve and an output heat flow curve of the device; carrying out frequency domain conversion on the time domain thermal impedance curve to obtain a frequency domain thermal impedance model and the characteristic frequency number and interval thereof; fitting the time domain output heat flow curve in combination with the characteristic frequency of the frequency domain thermal impedance model, and extracting the characteristic frequency value of the power semiconductor device; furthermore, carrying out curve fitting on the time domain thermal impedance curve. The accuracy of the characteristic frequency of the frequency domain thermal impedance model is improved. Correspondingly, the invention further provides a system corresponding to the method, a terminal and a medium. According to the method and system, the parameter extraction process of the frequency domain thermal impedance model is simplified, and the parameter accuracy is improved.
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Description

technical field

[0001] The present invention relates to the technical field of power electronics, in particular to a method, system, terminal and medium for extracting characteristic frequencies of power semiconductor devices based on heat flow. Background technique

[0002] Whether the temperature characteristics of power semiconductor devices can be accurately predicted in practical applications is an important basis for improving the reliability of power electronic systems. In recent years, the frequency domain thermal impedance model is gradually attracting people's attention, because compared with the traditional Foster and Cauer model, it can accurately predict the temperature characteristics of power semiconductor devices in the whole frequency band. However, there is no uniform extraction method for the most critical characteristic frequency parameters in the frequency-domain thermal impedance model. Existing methods are very complex and cannot guarantee accuracy. ...

Claims

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