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A kind of epitaxial growth method of gallium nitride quantum well

A gallium nitride quantum and epitaxial growth technology, applied in the direction of gaseous chemical plating, coating, semiconductor devices, etc., can solve the problems of instability and consistency, and achieve large-scale commercial production, low price, The effect of high crystal quality

Active Publication Date: 2021-07-23
辽宁百思特达半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Blue shift is currently a major problem in gallium nitride-based light-emitting diodes. Unstable blue shift will have an immeasurable impact on stable production and the consistency of device luminance under different application currents. Therefore, blue shift The stability of the quantity is a problem that manufacturers of light-emitting diodes have been working hard to solve

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  • A kind of epitaxial growth method of gallium nitride quantum well

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] (1) Substrate: Select silicon as the substrate, put it into the growth chamber of the LP-MOCVD equipment, and under the conditions of 1020 ° C and 30-50 mbar growth pressure, pure N 2 Preheat treatment in the atmosphere for 8 minutes to remove impurities and oxides on the surface of the silicon substrate;

[0037] (2) GaN low temperature nucleation layer: the nucleation temperature is 580 °C, pure NH 3 Pass TMGa into the atmosphere to grow a GaN low-temperature nucleation layer with a thickness of 20-25 nm;

[0038](3) Annealing treatment: Under the conditions of 1000 °C and 60-80 mbar growth pressure, the mixing ratio of N and H is 3:1, and kept for 10-15 minutes, the GaN low-temperature nucleation layer is annealed, and the nucleation layer is transformed into a Crystal-oriented nucleation islands;

[0039] (4) Forming a GaN film: keep the temperature and growth pressure of the growth chamber unchanged, keep the growth atmosphere unchanged as a mixture of N and H, a...

Embodiment 2

[0049] This embodiment differs from Embodiment 1 in that In is generated a Ga 1-a The number of cycles of the N quantum well is 15 and the generation of P-type Al X Ga 1-X N layers, x is 0.5.

[0050] Under the condition of 20mA injection current, the blue shift of the gallium nitride LED structure of the present invention is stable between 2nm and 3nm, while the blue shift of the original gallium nitride based LED structure fluctuates between 3nm and 10nm.

Embodiment 3

[0052] This embodiment differs from Embodiment 1 in that In is generated a Ga 1-a The number of cycles of the N quantum well is 8 and the generation of P-type Al X Ga 1-X N layers, x is 0.4.

[0053] Under the condition of 20mA injection current, the blue shift of the gallium nitride LED structure of the present invention is stable between 2nm and 3nm, while the blue shift of the original gallium nitride based LED structure fluctuates between 3nm and 10nm.

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Abstract

The invention relates to the field of optoelectronic technology, in particular to an epitaxial growth method of gallium nitride quantum wells; comprising the following steps: preheating, low-temperature nucleation, annealing, forming a GaN thin film, forming a non-doped GaN buffer layer, forming n type gallium nitride layer, forming In a Ga 1‑a N quantum well, forming P-type Al X Ga 1‑X N layer, forming a P-type layer and forming a GaN capping layer. The purpose of the present invention is to provide an epitaxial growth method of gallium nitride quantum wells, which can keep the blue shift stable.

Description

technical field [0001] The invention relates to the technical field of optoelectronics, in particular to an epitaxial growth method of a gallium nitride quantum well. Background technique [0002] The research and application of GaN materials is currently the frontier and hotspot of global semiconductor research. It is a new type of semiconductor material for the development of microelectronic devices and optoelectronic devices. The third-generation semiconductor material after the second-generation GaAs and InP compound semiconductor materials. It has the properties of wide direct band gap, strong atomic bond, high thermal conductivity, good chemical stability (hardly corroded by any acid) and strong radiation resistance, which is widely used in optoelectronics, high temperature and high power devices and high It has broad prospects in the application of high frequency microwave devices. [0003] At present, the common GaN-based light-emitting diode structure is: the ligh...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06C23C16/44C23C16/02C23C16/56C23C16/34
CPCC23C16/0209C23C16/303C23C16/44C23C16/56H01L33/007H01L33/06
Inventor 尹宝堂王子懿林丰旭单娟田露
Owner 辽宁百思特达半导体科技有限公司