A quantum dot light-emitting diode based on corona discharge interface modification and its preparation method

A technology of quantum dot luminescence and corona discharge, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., to achieve the effects of reducing electrical conductivity, reducing electron injection efficiency, and increasing radiation recombination efficiency

Active Publication Date: 2022-05-20
HENAN INST OF ENG
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Problems solved by technology

[0009] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art, provide a quantum dot light-emitting diode based on interface modification and its preparation method, aiming to find a simple, economical and suitable for industrial production application to improve the EML / ETL interface method to solve the phenomenon of carrier imbalance in existing devices, thereby improving the luminous efficiency of the device

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  • A quantum dot light-emitting diode based on corona discharge interface modification and its preparation method
  • A quantum dot light-emitting diode based on corona discharge interface modification and its preparation method
  • A quantum dot light-emitting diode based on corona discharge interface modification and its preparation method

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Embodiment Construction

[0040] The present invention will be further described below in conjunction with specific embodiments. It should be understood that the following examples are only used to illustrate the present invention rather than limit the scope of the present invention, and those skilled in the art can make some non-essential improvements and adjustments based on the content of the above invention.

[0041] In the embodiment of the present invention, the corona discharge generates charged ions through an air ionization gun, which is easy to operate, takes a short time, and can be reused for about 50,000 times without the need for batteries or other supplies. Corona discharge was first applied to electrostatic precipitator and has a history of more than 100 years. When a high voltage is applied to both ends of the electrode but does not reach the breakdown air voltage, the gas medium near the electrode is partially broken down to produce a mild discharge method, which is called corona disc...

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Abstract

The invention discloses a quantum dot light-emitting diode based on corona discharge interface modification and a preparation method thereof. The quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode. The quantum dots A hole transport layer is arranged between the light-emitting layer and the anode, a hole injection layer is arranged between the hole transport layer and the anode, an electron transport layer is arranged between the quantum dot light-emitting layer and the cathode, and the quantum dots The surface of the light-emitting layer close to the electron transport layer is provided with a negatively charged ion layer or a positively charged ion layer generated by corona discharge. The interface regulation method proposed in the present invention can effectively passivate the defects at the QDs / ZnO interface, thereby greatly increasing the radiative recombination efficiency of electron-holes at low brightness. The present invention provides a simple, cost-effective and novel method that does not complicate device fabrication and device structure to balance the carrier density of the light-emitting layer to improve the efficiency of the QLED device.

Description

technical field [0001] The invention belongs to the technical field of diode preparation, and in particular relates to a quantum dot light-emitting diode based on corona discharge interface modification and a preparation method thereof. Background technique [0002] The invention and use of semiconductor light-emitting diodes (LEDs) opened a new era of human lighting and display. At present, the first-generation LEDs of III-V semiconductors such as gallium nitride have been widely used in lighting and outdoor large-screen array displays. As the second-generation LED technology, organic LED (OLED) has many advantages such as all-solid-state structure, flexibility, fast response, and low energy consumption. It has been widely used in small-area smart terminal displays. The recently developed LED devices based on II-VI colloidal quantum dots (QD) have size-tuned emission wavelengths, excellent color purity and near 100% fluorescence quantum yields (QYs), and have outstanding a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00Y02E10/549Y02P70/50
Inventor 陈铃李栋栋薛丽莎苏丽霞刘少辉
Owner HENAN INST OF ENG
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