Wafer fixing ring as well as preparation method and application thereof

A wafer fixing and spraying technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problems of time-consuming and laborious assembly process, complex structure, etc., and achieve the effect of avoiding adverse effects

Active Publication Date: 2021-03-16
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF11 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to its complex structure, there is a problem tha

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer fixing ring as well as preparation method and application thereof
  • Wafer fixing ring as well as preparation method and application thereof
  • Wafer fixing ring as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] This embodiment provides a method for preparing a wafer fixing ring, the cross-sectional view of the wafer fixing ring is as follows figure 1 As shown, the partial enlarged view of the cross-sectional view is shown in figure 2 As shown, the wafer fixing ring includes a bottom groove 1 and a through hole 2 passing through the bottom groove 1 .

[0068] The side wall of the through hole 2 is symmetrically provided with three protrusions 3, and the thickness of the protrusions 3 does not exceed the depth of the through hole 2; the "symmetric arrangement" in this embodiment means that the protrusions 3 surround the crystal. The central axis of the circular fixed ring is arranged symmetrically; in this embodiment, the protruding part 3 is provided in the through hole 2, and the thickness of the protruding part 3 does not exceed the depth of the through hole 2, so that the through hole 2 forms the lower groove area and the upper groove area. The groove area; the lower groov...

Embodiment 2

[0077] This embodiment provides a method for manufacturing a wafer fixing ring, the wafer fixing ring includes a bottom groove 1 and a through hole 2 passing through the bottom groove 1 .

[0078] The side wall of the through hole 2 is symmetrically provided with four protrusions 3, and the thickness of the protrusions 3 does not exceed the depth of the through hole 2; the "symmetric arrangement" in this embodiment means that the protrusions 3 surround the crystal. The central axis of the circular fixed ring is arranged symmetrically; in this embodiment, the protruding part 3 is provided in the through hole 2, and the thickness of the protruding part 3 does not exceed the depth of the through hole 2, so that the through hole 2 forms the lower groove area and the upper groove area. The groove area; the lower groove area is used to place the wafer, and the setting of the upper groove area plays the role of absorbing the particles falling off during the magnetron sputtering proces...

Embodiment 3

[0087] This embodiment provides a method for manufacturing a wafer fixing ring, the wafer fixing ring includes a bottom groove 1 and a through hole 2 passing through the bottom groove 1 .

[0088] The side wall of the through hole 2 is symmetrically provided with six protrusions 3, and the thickness of the protrusions 3 does not exceed the depth of the through hole 2; the "symmetric arrangement" in this embodiment means that the protrusions 3 surround the crystal. The central axis of the circular fixed ring is arranged symmetrically; in this embodiment, the protruding part 3 is provided in the through hole 2, and the thickness of the protruding part 3 does not exceed the depth of the through hole 2, so that the through hole 2 forms the lower groove area and the upper groove area. The groove area; the lower groove area is used to place the wafer, and the setting of the upper groove area plays the role of absorbing the particles falling off during the magnetron sputtering process...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Outer diameteraaaaaaaaaa
Diameteraaaaaaaaaa
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a wafer fixing ring as well as a preparation method and application thereof. The wafer fixing ring comprises a bottom face groove and a through hole penetrating through the bottom face groove; at least two protruding parts are symmetrically arranged on the side wall of the through hole; the top face of the wafer fixing ring comprises a sand blasting area and a meltallizing area which are arranged in sequence; the sand blasting area is an equal-width area extending from the side wall of the through hole to the side wall of the wafer fixing ring; and the meltallizing areacomprises a concave meltallizing area, a convex meltallizing area and a plane meltallizing area which are sequentially arranged, and the concave meltallizing area is connected with the sand blasting area. According to the wafer fixing ring as well as the preparation method and application thereof, through specific arrangement of the wafer fixing ring structure, a wafer can be stably fixed by the wafer fixing ring, the service life is long, and particles falling in the magnetron sputtering process can be effectively adsorbed.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to a magnetron sputtering part, in particular to a wafer fixing ring and its preparation method and application. Background technique [0002] PVD coating technology refers to the use of physical methods to vaporize the material source-solid or liquid surface into gaseous atoms, molecules or parts of ionization into ions, and through the low-pressure gas (or plasma) process, deposit a certain special function on the surface of the substrate. thin film technology. The main methods of physical vapor deposition include vacuum evaporation, sputtering coating, arc plasma plating, ion coating or molecular beam epitaxy. [0003] Sputtering coating technology uses ions to bombard the surface of the target, and the phenomenon of knocking out the atoms of the target is sputtering. The deposition of atoms generated by sputtering on the surface of the substrate is called sputter coating. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/50C23C14/35C23C14/56
CPCC23C14/50C23C14/35C23C14/564
Inventor 姚力军边逸军潘杰王学泽章丽娜
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap