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Method for producing NLDMOS device, and NLDMOS device

A device and area technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as the decrease of the standby time of the whole machine, the sampling resistance affecting the total resistance value of the loop, etc., and achieve the effect of reducing the area.

Pending Publication Date: 2021-03-16
无锡先瞳半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a device for lithium battery protection, which solves the problem in the prior art that the resistance value of the sampling resistor affects the total resistance value in the loop, which leads to a decrease in the standby time of the whole machine

Method used

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  • Method for producing NLDMOS device, and NLDMOS device
  • Method for producing NLDMOS device, and NLDMOS device
  • Method for producing NLDMOS device, and NLDMOS device

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Embodiment Construction

[0041] In order to facilitate the understanding of the present invention, the present invention will be described in more detail below with reference to the accompanying drawings and specific embodiments. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention may be embodied in many different forms and is not limited to the embodiments described in this specification. Rather, these embodiments are provided so that a thorough and complete understanding of the present disclosure is provided.

[0042] It should be noted that, unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as commonly understood by those skilled in the technical field of the present invention. The terms used in the description of the present invention are only for the purpose of describing specific embodiments, and are not used to limit the present invention. As used in this specification, the te...

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Abstract

The embodiment of the invention provides a method for producing an NLDMOS device and further provides an NLDMOS device obtained through the method. The method comprises the following steps: firstly, providing a low-resistance P+ type substrate, then forming a BN region, two STI regions and an Nwell layer on the low-resistance P+ type substrate, respectively etching PB regions on the inner sides ofthe STI regions, then growing gate oxide above the low-resistance P+ type substrate and forming a gate electrode, generating a source electrode region in the PB regions, finally etching a deep hole region between the PB regions, and after the deep hole region is filled, carrying out metal deposition etching to form a drain region. The area of the NLDMOS device produced by the method provided by the invention is greatly reduced, so that devices with a current detection function can be integrated.

Description

technical field [0001] The invention relates to the field of lithium battery protection, in particular to a method for producing an NLDMOS device and an NLDMOS device obtained by the method. Background technique [0002] The traditional lithium battery protection device is just a conventional power device. In the practical application scheme, an external high-precision sampling resistor must be installed, and the circuit can be accurately controlled by sampling the voltage on the sampling resistor. [0003] However, for large-capacity batteries, the resistance value of the sampling resistor will greatly increase the total resistance value in the entire loop, thereby increasing the power consumption of the system and greatly reducing the standby time of the whole machine. Then, how to improve from NLDMOS devices to provide NLDMOS devices with smaller area, so that power devices with current detection function can be integrated, so that the use of sampling resistors can be avo...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/0603H01L29/0684H01L29/66681H01L29/7803H01L29/7815
Inventor 宋利军张子敏
Owner 无锡先瞳半导体科技有限公司
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