Wet etching method of semiconductor substrate

Abstract

The invention discloses a wet etching method of a semiconductor substrate. The invention aims to adjust the etching time of an (n+1) substrate according to the etching rate of the n substrateso as to adjust the etching amount of the (n+1) substrate, and thus, the etching amount of each substrate is close to a preset etching amount, the etching amount of the (n+1) substrate is thesame as the etching amount of the (n) substrate, the etching uniformity of the substrate is improved, and the yield of products is improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, and more specifically, to the wet etching technology of a semiconductor substrate. Background technique [0002] With the gradual reduction of semiconductor feature size, the wet etching process can precisely control the removal amount of thin film or metal layer. Since wet etching has many advantages, such as: low consumption of raw materials, strong adaptability, good surface uniformity, little damage to silicon wafers, and is suitable for most metal materials and substrate materials, wet etching is widely used in semiconductors. The position in manufacturing is becoming more and more important. [0003] In the wet etching process, due to equipment reasons (precise control of etching time or etching solution temperature) or the life of the etching solution itself, there will be a sudden change in the etching amount of the etching solution, resulting in the loss of the substrate ...

AI Technical Summary

Problems solved by technology

When using a single-chip etching machine for the substrate etching process, since each substrate is processed separately in the etching machine, under this processing method, the etching amount of each substrate is likely to vary, which affects product quality

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