Split-gate flash memory and forming method thereof

A memory and flash technology, applied in the field of split-gate flash memory and its formation, can solve problems such as high static power consumption and dynamic power consumption requirements, poor erasing performance, etc.

Pending Publication Date: 2021-03-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the erasing performance of existing split-gate flash memory with low-voltage read operation is poor. In addition, in low-power applications (such ...

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  • Split-gate flash memory and forming method thereof
  • Split-gate flash memory and forming method thereof
  • Split-gate flash memory and forming method thereof

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Embodiment Construction

[0052] A split-gate flash memory and its forming method of the present invention will be further described in detail below. The invention will now be described in more detail with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it being understood that those skilled in the art may modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0053] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the...

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Abstract

According to the split-gate flash memory and the forming method thereof provided by the invention, in the forming method of the split-gate flash memory, the floating gate tip is formed while the floating gate is formed, no process step is added in the whole process, and meanwhile, the newly added floating gate tip enhances the erasure capability of a memory cell and greatly improves the numericalvalue of current Ir1, so reliability of the memory cell is improved; the erase voltage on the erase gate during erase is reduced, so that the read operation interference is reduced, and the static power consumption and the dynamic power consumption of the split-gate flash memory for low-voltage read operation are reduced; in addition, the source line formed by the subsequent process only influences the erasing efficiency and does not influence the channel, so durability characteristic of the memory unit can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a split-gate flash memory and a forming method thereof. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be affected by the power supply. Disappears without interruption, and flash memory is a special structure of electrically erasable and programmable read-only memory. Today, flash memory has occupied most of the market share of non-volatile semiconductor memory, becoming the fastest growing non-volatile semiconductor memory. [0003] Generally, the flash memory has a split-gate s...

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Application Information

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IPC IPC(8): H01L27/11521H01L29/423H01L29/788H01L21/336
CPCH01L29/42328H01L29/788H01L29/66825H10B41/30
Inventor 王旭峰于涛李冰寒
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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