Optical thin film deposition device and method

Abstract

The invention relates to the field of optical thin film deposition, and discloses an optical thin film deposition device and method. The optical thin film deposition device comprises an ion source, asubstrate clamp, a clamp base, a base fixing piece, a vacuum chamber, a uniformity correction baffle, a gas path system and a wide spectrum film thickness monitoring system, wherein the ion source islocated on the top of the vacuum chamber; the substrate clamp is arranged below the ion source and placed on the upper portion of the clamp base; the clamp base is arranged in the base fixing piece; the base fixing piece is located at the bottom of the vacuum chamber; the uniformity correction baffle is arranged between the ion source and the substrate clamp; the gas path system communicates withthe vacuum chamber and conveys gas into the vacuum chamber for thin film deposition, and the pressure intensity in the vacuum chamber is kept stable; and the wide spectrum film thickness monitoring system is connected with the vacuum chamber and monitors the thin film deposition thickness in real time. According to the optical thin film deposition device and method, the ion beam auxiliary atomic layer deposition technology is utilized, accordingly, the stress of an atomic layer deposition thin film is controlled, and the thin film deposition stress is reduced.

Description

technical field [0001] The invention relates to the field of optical thin film deposition, in particular to an optical thin film deposition equipment and method. Background technique [0002] The deposition of optical thin films in the prior art usually adopts electron beam evaporation technology. The principle of electron beam evaporation: the cathode filament emits electron beams, and the electron beams are incident on the film material after being deflected by a magnetic field, locally heating the film material, and the volatilized film material molecules are attached to the surface of the substrate fixture, and deposited into a thin film. However, due to the instability of evaporation in the electron beam evaporation technology, the thickness accuracy of the deposited film layer is above 5nm. Therefore, the deposition of thin films by electron beam evaporation technology can only be used for devices that do not require high film thickness accuracy, such as high-reflecti...

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Problems solved by technology

[0004]However, the ALD film has very high stress. The existence of stress will not only cause the deformation of the substrate to be plated, but also cause the film layer to fall off from the substrate, thus Affects the effect of thin film deposition

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