Gallium nitride-based high-electron-mobility transistor simulation method and device and storage medium

Abstract

The invention discloses a gallium nitride-based high-electron-mobility transistor simulation method and device and a storage medium, and relates to the technical field of semiconductor device simulation. The method comprises the following steps: acquiring an input voltage to be simulated; inputting input voltage into a GaN-based high-electron-mobility transistor model, acquiring output current output after model operation, wherein the model comprises an original ASM model, an electric relationship is set between a grid electrode and a source electrode of the original ASM model, and an electricrelation is set between the grid electrode and a drain electrode of the original ASM model; and the formula of the model comprises a calculation formula of reverse current between the grid electrodeand the source electrode and a calculation formula of reverse current between the grid electrode and the drain electrode. The gallium nitride-based high-electron-mobility transistor simulation methodcan solve the problem of deficiency of an advanced high-electron-mobility field effect transistor intensive model in description of device gate reverse current, thereby improving the simulation accuracy of the transistor.

Description

technical field [0001] The present invention relates to the technical field of simulation of semiconductor devices, in particular to a simulation method, device and storage medium for gallium nitride-based high electron mobility transistors. Background technique [0002] AlGaN / GaN high electron mobility transistor (High Electron Mobility Transistor, HEMT) has increasingly become the focus of today's RF microwave circuit design due to its characteristics of high power, high current density, high electron saturation velocity and high breakdown electric field. As the miniaturization of integrated circuits continues to increase and the degree of integration continues to increase, people's enthusiasm for monolithic microwave integrated circuit (Monolithic microwave integrated circuit, MMIC) design is gradually increasing. An accurate device model can simulate real device characteristics, help designers understand device characteristics, and also help design tape-out, which is of ...

AI Technical Summary

Problems solved by technology

However, the existing ASM model focuses on describing the trap model and field plate model of GaN devices, but the description of gate reverse current is missing. However, since GaN devices are under negative gate voltage It is turned on, and in existing applications, GaN devices also work under negative gate voltage, so the lack of description of the reverse current will affect the accurate description of the model for DC and large signals

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