Process for reducing defect rate of 8-inch polished wafer edge-removing sucker marks

Abstract

The invention discloses a process for reducing a defect rate of 8-inch polished waferedge-removing sucker marks. An environment process comprises the following steps: S1, firstly, modifying an original automatic edge-removing machine table pipeline in real time, and enabling a liquid outlet end of an original B-line liquid discharge pipeline to be independent so that the B-line liquid discharge pipeline is directly connected with a secondary distribution pipeline, an A-line liquid discharge pipeline is connected with a converging pipeline, and the liquid outlet end of the converging pipeline is connected with the secondary distribution pipeline; and S2, placing and adding a 8-inch Czochralski acid-corroded silicon wafer with a proper size and thickness to a sucker loading position of an automatic edge-removing machine table, starting the machine table to supply a hydrofluoric acid and deionized water, performing edge silicon dioxide corrosion processing on the 8-inch Czochralski acid-corroded silicon wafer through the automatic edge-removing machine, and after the edge silicon dioxide corrosion processing is completed, guiding out pure water through the automatic edge-removing machine table pipeline to wash impurities on the surface of a silicon wafer in real time, and taking down the 8-inch Czochralski acid-corroded silicon wafer after washing.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a process for reducing the defect rate of suction cup printing on an 8-inch polishing sheet. Background technique [0002] In today's stage of vigorous development of semiconductor companies, manufacturing companies must continuously improve product competitiveness. An increase in the pass rate can help companies quickly reduce production costs, avoid ineffective waste of production costs, enhance corporate competitiveness, and quickly recover investment costs. [0003] At present, during the edge removal process, the silicon dioxide on the surface of the product is corroded due to the lack of HF cleaning on the surface of the suction cup, resulting in macroscopic color differences and affecting the appearance quality. At the same time, the silicon dioxide layer itself blocks self-doping after being corroded The ability of the effect will be affected to a cert...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a kind of technology that reduces the defect rate of the suction cup of the 8-inch polishing sheet to remove the edge, to solve the problem that the surface of the product is damaged due to the HF on the surface of the suction cup that is not cleaned in the process of edge removal at present in the above-mentioned background technology. The silicon oxide is corroded, forming a macroscopic color difference, which affects the appearance quality. At the same time, after the silicon dioxide layer is corroded, its ability to block the self-doping effect will be affected to a certain extent.

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