Method of reducing topological artifacts, electron microscope system and computer program product

An electron microscope and topological technology, which is applied in the use of wave/particle radiation for material analysis, measuring devices, instruments, etc., can solve the problems of large space and increase the cost of EDS system, and achieve the effect of overcoming obstacles, saving space and cost

Pending Publication Date: 2021-03-30
CARL ZEISS MICROSCOPY GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] This detector configuration reduces adverse terrain effects but significantly increases the cost of the EDS system
Also, two EDS detectors require a large space in the sample chamber

Method used

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  • Method of reducing topological artifacts, electron microscope system and computer program product
  • Method of reducing topological artifacts, electron microscope system and computer program product
  • Method of reducing topological artifacts, electron microscope system and computer program product

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Embodiment Construction

[0044] figure 1 A side view of a typical configuration of SEM system 1 having an EDS analysis function is shown: The EDS detector 4 is mounted on one side of the sample chamber 3. An electron beam 7 is generated in the electron optical column 2 and the specimen 6 is directed. The X-ray photon 5 transmitted from the sample 6 is detected by the EDS detector 4.

[0045] However, due to its lateral arrangement, the EDS detector 4 is only opposite to the side of the sample, which is typically causing a strong terrain effect in EDS analysis. The side irradiation produces changes in the detected X-ray signal, especially when the line scan or element mapping is performed.

[0046] Figure 2 shows the effect of detecting the arrangement of the detector when the X-ray signal is detected.

[0047] Figure 2A Schematically illustrates when the SEM system is operated in line scan mode figure 1 The effect of the EDS detector arrangement. The line scan mode refers to a line of electron beam al...

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Abstract

The present invention includes a method for reducing topological artifacts in EDS analysis of microscopic specimens, as well as an electron microscope system and a computer program product. The methodis performed with the electron microscope system, comprising: an electron column generating an electron beam; a scanning system; an EDS detector that detects an X-ray signal; and a movable stage holding the specimen, the stage configured to move along at least axes x and y and rotate about an axis of rotation, the stage configured to perform a compute center rotation and / or a concentric rotation.The method comprises the steps of: a) selecting a region of interest (ROI) on the specimen while maintaining the ROI in a first orientation relative to the EDS detector; b) executing first EDS analysis to obtain a result A; c) rotating the specimen stage about the axis of rotation by an angle alpha such that the ROI is maintained in a second orientation relative to the EDS detector; d) rotating the compensation sample table; e) executing second EDS analysis to obtain a result B; and f) combining the result A and the result B.

Description

Technical field [0001] The present invention relates to a method and apparatus for preventing or at least reducing a topological artifact that may occur in EDS analysis of three-dimensional detection samples. Background technique [0002] EDS (Energy Quantity Subcutor) is a method for analyzing material characteristics. [0003] Electron beam (also known as an electron beam) scan on the surface of the sample to be checked. The X-ray photon is released due to the interaction between the electron with the atoms of the sample material. [0004] The spectrometer is used to transmit an X-ray that is transmitted according to the energy analysis. Since the transmitted X-ray has an energy as a characteristic of the excited chemical element, the detected X-ray signal provides information about the chemical component of the sample material. The typical mode of the EDS system is "line scan" or "element mapping". [0005] However, the interaction of primary electrons and sample materials is ...

Claims

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Application Information

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IPC IPC(8): G01N23/2251G01N23/2204G01N23/20091
CPCG01N23/20091G01N23/2204G01N23/2251G01N2223/0563G01N2223/3035G01N23/2206G01N2223/071G01N2223/306G01N2223/309G01N2223/32G01N2223/3301G01N2223/3306G01N2223/402
InventorR.阿诺德W.伯格M.博塞S.迪默H.多默M.埃德尔曼韩露阳M.希特尔A.詹森S.迈耶K.舒伯特
OwnerCARL ZEISS MICROSCOPY GMBH