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Semiconductor device

A technology of semiconductors and fins, which is applied in the field of field effect transistors and their formation, and can solve the problems of increasing the complexity of the three-dimensional transistor process of the integrated circuit structure

Inactive Publication Date: 2021-03-30
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This miniaturization has also increased the complexity of integrated circuit structures (such as three-dimensional transistors) and processes, and in order to achieve these advances, developments in integrated circuit processes and production are also required.
For example, as device dimensions continue to shrink, device performance (such as degradation of device performance associated with various defects) and fabrication cost of field effect transistors become more challenging
While approaches to such challenges have been largely desirable, they have not been satisfactory in all respects

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

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Embodiment Construction

[0036] The following disclosure provides numerous embodiments, or examples, for implementing various elements of the provided subject matter. Specific examples of each element and its configuration are described below to simplify the description of the embodiments of the present invention. Of course, these are just examples, not intended to limit the embodiments of the present invention. For example, if a description mentions that a first element is formed on a second element, it may include an embodiment in which the first and second elements are in direct contact, or may include an additional element formed between the first and second elements , so that they are not in direct contact with the example. In addition, the embodiments of the present invention may repeat reference numerals and / or letters in various examples. This repetition is for the purpose of brevity and clarity and not to show the relationship between the different embodiments and / or configurations discusse...

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Abstract

A semiconductor device includes a semiconductor substrate having a first region and a second region. The device further includes a first pair of fin structures within the first region. The device further includes a second pair of fin structures within the second region. A top surface of the semiconductor surface between fin structures within the first pair is higher than a top surface of the semiconductor surface between the first pair and the second pair.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device, in particular to a field effect transistor and a method for forming the same. Background technique [0002] The semiconductor integrated circuit industry has experienced exponential growth. Technological advances in integrated circuit materials and design have produced several generations of integrated circuits, each generation having smaller and more complex circuits than the previous generation. During the evolution of integrated circuits, functional density (ie, the number of interconnected devices per chip area) typically increases while geometry size (ie, the smallest element or line that can be produced using a process) decreases. This miniaturized process generally provides the benefit of increased production efficiency and reduced associated costs. This miniaturization also increases the complexity of integrated circuit structures (such as three-dimensional transistors) an...

Claims

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Application Information

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IPC IPC(8): H01L27/092H01L21/8238
CPCH01L21/823821H01L21/823892H01L27/0924H01L27/0928
Inventor 杨智铨林祐宽
Owner TAIWAN SEMICON MFG CO LTD