Piezoelectric film device and preparation method thereof
A piezoelectric thin film and device technology, applied in the field of piezoelectric thin film devices and their preparation, can solve the problems of limiting the application range of piezoelectric elements, low inductive stress sensitivity, etc., and achieve the effect of improving the sensing sensitivity and widening the application range
Pending Publication Date: 2021-04-02
BOE TECH GRP CO LTD +1
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[0004] The invention provides a piezoelectric thin film device and a preparation method thereof, which can improve the low sensitivity of the induced stress of the existing piezoelectric element and limit the application range of the existing piezoelectric element
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[0033] In order to better understand the technical solutions provided by the embodiments of this specification, the technical solutions of the embodiments of this specification will be described in detail below through the drawings and specific examples. The detailed description of the technical solutions of the embodiments is not a limitation to the technical solutions of this specification. In the case of no conflict, the embodiments of this specification and the technical features in the embodiments can be combined with each other.
[0034] In this document, relational terms such as first and second etc. are used only to distinguish one entity or operation from another without necessarily requiring or implying any such relationship between these entities or operations. Actual relationship or sequence. Furthermore, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus...
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Abstract
The invention discloses a piezoelectric thin film device, a preparation method thereof and a piezoelectric thin film device. The piezoelectric thin film device comprises a driving substrate, a piezoelectric film layer and a floating gate layer, wherein the driving substrate comprises a substrate layer and a plurality of thin film transistors arranged on the substrate layer; the piezoelectric filmlayer is arranged on one side, far away from the substrate layer, of each of the plurality of thin film transistors; and the floating gate layer is arranged between the plurality of thin film transistors and the piezoelectric thin film layer, the floating gate layer generates charge change when the piezoelectric thin film layer is stressed, and the charge change causes the channel current of the thin film transistors to change. The device is advantaged in that problems that an existing piezoelectric element is low in stress induction sensitivity, and the application range of the existing piezoelectric element is limited can be solved.
Description
technical field [0001] The present application relates to the technical field of piezoelectric sensing, in particular to a piezoelectric thin film device and a preparation method thereof. Background technique [0002] Piezoelectric sensor is a sensor made by using a certain dielectric to produce piezoelectric effect after being subjected to external force. In recent years, electronics related to human sensing has begun to receive more and more attention, such as pulse sensors or electronic olfactory sensors. In the existing piezoelectric sensing technology, piezoelectric polymers such as polyvinylidene fluoride (PVDF) are usually used as piezoelectric film layers to make piezoelectric elements. Piezoelectric polymers such as PVDF are used as piezoelectric film layers with light weight, It has the advantages of good mechanical properties, high elasticity, and acoustic impedance close to biological tissue. [0003] At present, the structure of the existing piezoelectric elem...
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IPC IPC(8): H01L27/20H01L29/423H01L21/84H10N39/00
CPCH01L29/42324H01L21/84H10N39/00
Inventor 孟虎
Owner BOE TECH GRP CO LTD