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Fusing device and method for polycrystalline silicon process fuse

A fuse and polysilicon technology, which is applied in emergency protection devices, measuring devices, electronic circuit testing, etc., can solve problems such as low fusing success rate, low fusing current, and abnormal products, and achieve high fusing stability, high fusing yield, The effect of easy installation

Active Publication Date: 2021-04-09
无锡伟测半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, the fuse of the metal process is mainly fused by a large current impact; while the fuse of the polysilicon process has a relatively low fusing current, the conventional fusing method has a low success rate of fusing, and some fuses will enter after the CP test fusing passes. After the next packaging process, the fuse resistance will recover again, resulting in product abnormality and failure

Method used

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  • Fusing device and method for polycrystalline silicon process fuse
  • Fusing device and method for polycrystalline silicon process fuse
  • Fusing device and method for polycrystalline silicon process fuse

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0036] Embodiment 1 provides a fusing device for polysilicon process fuses. The embodiments described below with reference to the accompanying drawings are exemplary, and are only used to explain the present invention, and should not be construed as limitations to the present invention. Such as figure 1 with image 3 As shown, the fusing device of the polysilicon process fuse includes:

[0037] A fuse self-check module, the fuse self-check module is connected to the fuse pin of the chip to be processed, and is used to detect whether the fuse function is normal;

[0038] Fuse execution module, the first terminal a is used to connect the pin of the fuse that needs to be blown on the chip to be processed, the second terminal b is connected to the low level output terminal of the chip to be processed, and the third terminal c is connected to the chip to be processed The high-level output terminal of the chip, so that the voltage rises from 0 to the working voltage within 10nS wi...

Embodiment 2

[0042] This embodiment 2 provides a fusing device for polysilicon process fuses, which can be further optimized or improved on the basis of embodiment 1. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention. It should not be construed as a limitation of the present invention. Such as Figure 1-4 As shown, the fusing device of the polysilicon process fuse includes:

[0043] The fuse self-inspection module has at least one self-inspection unit, one end of the self-inspection unit is grounded, and the other end is connected to the fuse pin.

[0044] The self-inspection unit includes an indicator light, one end of the indicator light is one end of the self-inspection unit, the other end of the indicator light is connected to one end of a self-inspection resistor, and the other end of the self-inspection resistor is the The other end of the self-test unit.

[0045] Specifically, please refer ...

Embodiment 3

[0059] Embodiment 3 provides a fusing device for a polysilicon process fuse, which can be further optimized or improved on the basis of Embodiment 1 or Embodiment 2. The difference between this embodiment and Embodiment 2 lies in:

[0060] The fuse execution module includes a high-speed MOS transistor, the source is connected to the low-level output terminal of the chip to be processed, the drain is connected to the high-level output terminal of the chip to be processed, and the gate is connected to the chip to be processed. Handling the pins of the chips that require blown fuses. The high-speed MOS tube can flexibly control the output voltage and current.

[0061] Further, a fast recovery diode is connected in series between the gate and the pin of the fuse of the chip to be processed, so that the rising waveform has better stability.

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Abstract

The invention discloses a fusing device and method for a polycrystalline silicon process fuse. The fusing device of the polycrystalline silicon process fuse comprises a fusing self-checking module, a fusing execution module and an insulation resistance detection module; the fusing self-checking module is connected to a pin of a fuse of a chip to be processed and used for detecting whether the function of the fuse is normal or not; the first end of the fusing execution module is used for being connected with a pin of a fuse needing to be fused of the to-be-processed chip, the second end of the fusing execution module is connected with the low-level output end of the to-be-processed chip, the third end of the fusing execution module is connected with the high-level output end of the to-be-processed chip, and thus the voltage rises from 0 to the working voltage within 10 nS and does not oscillate downwards; and the insulation resistance detection module is used for detecting the resistance of the fused fuse. According to the invention, the fusing yield and reliability of the polycrystalline silicon process fuse can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a fusing device and method for polysilicon process fuses. Background technique [0002] In the field of integrated circuit probe (CP) testing, the fusing function of the fuse is required in many cases. At present, the commonly used fuses in the industry are divided into two types: polysilicon (Poly) and metal technology. The metal process fuse resistance is generally within 10 ohms. Usually, the fuse of the metal process is mainly fused by a large current impact; while the fuse of the polysilicon process has a relatively low fusing current, the conventional fusing method has a low success rate of fusing, and some fuses will enter after the CP test fusing passes. After the next packaging process, the fuse resistance will recover again, resulting in product abnormality and failure. Contents of the invention [0003] The object of the present invention is to provide a pol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/28H01H85/32
CPCG01R31/2896H01H85/32
Inventor 傅郁晓吴庆陈迎涛杨栓张丽霞
Owner 无锡伟测半导体科技有限公司