Substrate processing method and substrate processed by method

Abstract

The invention provides a substrate processing method and a substrate processed by the method, and the substrate processing method comprises the following steps: carrying out linear cutting of the substrate, and obtaining a substrate with a preset thickness; carrying out whirl coating treatment on the substrate obtained by cutting to form a layer of flat film on the surface of the substrate; generating a damage layer at a predetermined depth position of the cut substrate by two-dimensionally scanning the cut substrate by a focused laser after the flat film is cured; carrying out stripping processing on the substrate based on the damage layer; and carrying out polishing treatment on the substrate subjected to stripping treatment. According to the substrate processing method and the substrate processed by the method, the machining process can be greatly reduced, so that the stress distribution of the substrate is reduced, the quality of the substrate is improved, and the processing cost of the substrate is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a substrate processing method and a substrate processed by the method. Background technique [0002] The current conventional substrate processing technology generally includes processes such as wire cutting, grinding, chamfering, annealing, copper polishing and polishing, such as figure 1 As shown, the main processes and mechanisms are mechanical (such as wire cutting, grinding, chamfering and copper polishing), chemical (such as polishing) and thermal processing (such as annealing). [0003] In traditional mechanical processing, there is inevitably pressure contact or friction process, which will cause damage on the surface or inside of the substrate, resulting in non-uniform stress on the substrate. Non-uniform stress will have two negative effects: ( 1) Non-uniform stress will change the atomic spacing of the substrate, reduce the quality of epitaxial mat...

AI Technical Summary

Problems solved by technology

[0003] In traditional mechanical processing, there is inevitably pressure contact or friction process, which will cause damage on the surface or inside of the substrate, resulting in non-uniform stress on the substrate. Non-uniform stress will have two negative effects: ( 1) Non-uniform stress will change the atomic spacing of the substrate, reduce the quality of epitaxial materials, and increase the defect density; (2) Non-uniform stress will cause deformation of the substrate, resulting in large warpage, such as wire cutting The warp can reach more than 40um

In addition, in traditional mechanical processing, there will be wire cut marks on the surface of the wire slice obtained after wire cutting, and the height is generally 1um to 100um. This is because the diamond wire used for wire cutting has a certain diameter, about 100um to 500um. During the process, the high-speed reciprocating movement of the diamond wire will inevitably cause jitter, and therefore, a wire cut mark will be formed on the surface of the substrate

The appearance of line cut marks may have an impact on the subsequent processing of the substrate

To remove the line cut marks, it is roughly necessary to polish or grind to remove the thickness of 100um, so that the roughness is reduced to below 0.5um. This kind of polishing or grinding to remove the thickness of 100um is a waste of substrate material, which greatly increases the cost of substrate processing. High; in addition, the time required for polishing treatment is too long, such as the current Al 2 o 3 The removal rate of substrate polishing is about 10um / h, that is to say Al 2 o 3 It takes more than 10h to remove 100um thickness, which is obviously not feasible

Furthermore, the mechanical processing method of polishing or grinding for a long time will generate large and non-uniform mechanical stress on the substrate itself, thereby reducing the quality of the substrate.

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