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Method for realizing ultra-deep sub-wavelength periodic structure based on ultra-short pulse laser

A technology of ultra-short pulse laser and periodic structure, which is applied in laser welding equipment, welding equipment, metal processing equipment, etc., can solve the problems of few reports on preparation methods, achieve lower processing threshold, simple operation process, and low manufacturing cost Effect

Pending Publication Date: 2021-04-13
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the use of ultrashort pulse lasers to induce periodic structures on the surface of materials is mainly at the subwavelength to deep subwavelength level, and there are few reports on the preparation of extremely deep subwavelength periodic structures.

Method used

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  • Method for realizing ultra-deep sub-wavelength periodic structure based on ultra-short pulse laser
  • Method for realizing ultra-deep sub-wavelength periodic structure based on ultra-short pulse laser
  • Method for realizing ultra-deep sub-wavelength periodic structure based on ultra-short pulse laser

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Embodiment 1

[0024] In this embodiment, 1 is to use an ultrashort pulse laser of 800 nm, the pulse width is 115 fs, the frequency can be adjusted within the range of 1000 Hz, and the average power can reach 2 W. By adjusting the polarization beam splitter 3 and the half-wave plate 2, the laser power is 200mW, beam splitter 4 is a dielectric film beam splitter, and when it is 45 degrees, its beam splitting ratio is 1:9; lens 6 is a plano-convex lens with a focal length of 200 nm; sample 7 is a coated sample.

[0025] The specific steps are: use an electron beam evaporation machine to coat the surface of the sample, then clean it, place the sample 7 on the three-dimensional translation platform 8, use the computer 9 to set the scanning program, and adjust the laser power by half-wave The sheet 2 and the polarizing beam splitter 3 make it reach the set value, and the translation stage 8 is controlled by the computer 9 to realize large-area array processing. Move the translation stage up and d...

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Abstract

The invention provides a method for realizing an ultra-deep sub-wavelength periodic structure based on ultra-short pulse laser. According to the method, the preparation of the ultra-deep sub-wavelength periodic structure can be realized under the assistance of a thin film, the operation process is simple, the manufacturing cost is low, the processable materials are wide, particularly, the problem that transparent and ultra-brittle materials are difficult to process (the material processing threshold value can be greatly reduced) is solved, manufacturing of the ultra-deep sub-wavelength periodic structure with one forty percent of the incident laser wavelength can be achieved, and rapid large-area array preparation can further be achieved.

Description

technical field [0001] The invention belongs to the field of laser manufacturing, and in particular relates to a method for realizing an extremely deep subwavelength periodic structure based on an ultrashort pulse laser. Background technique [0002] One of the greatest inventions of mankind in the last century is the laser, which has greatly changed our lives. Since the birth of lasers, it has received extensive attention in the field of industrial processing. Laser-based manufacturing (such as cutting, drilling, welding, paint removal, rust removal, etc.) has greatly improved industrial efficiency, processing accuracy and quality, and It also plays a key role in promoting intelligent manufacturing. However, there are still many problems in ordinary laser processing materials, such as rough processing end faces, difficulties in ultra-fine processing, and limited processing materials (especially for transparent materials and superhard materials). With the rapid development...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/0622B23K26/70
CPCB23K26/0624B23K26/702
Inventor 邓国亮肖垚杨火木
Owner SICHUAN UNIV