Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gasket and its manufacturing method, package structure and its manufacturing method

A packaging structure and gasket technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficulty, occupy a large space, limit the space of passive components, etc., achieve good electrical performance, save space, The effect of reducing the device

Active Publication Date: 2022-08-09
YANGTZE MEMORY TECH CO LTD
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the package structure includes multiple bare cores, multiple passive components such as resistors and capacitors need to be placed, and these passive components need to occupy a large space
However, the internal space of the packaging structure is limited, which limits the space available for passive components.
[0005] It is very difficult to arrange more passive components, and it is even impossible to realize such a packaging structure
In addition, general-purpose passive components have a plastic package and pin structure, which is a redundant structure that takes up space for the package structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gasket and its manufacturing method, package structure and its manufacturing method
  • Gasket and its manufacturing method, package structure and its manufacturing method
  • Gasket and its manufacturing method, package structure and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0071] For a better understanding of the present application, various aspects of the present application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are merely illustrative of exemplary embodiments of the present application and are not intended to limit the scope of the present application in any way. Throughout the specification, the same reference numerals refer to the same elements. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0072] It should be noted that in this specification, the expressions first, second, third etc. are only used to distinguish one feature from another feature and do not imply any limitation on the feature. Accordingly, the first electrode discussed below may also be referred to as a second electrode without departing from the teachings of the present application. vice versa.

[0073] In the drawin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application provides a gasket and a manufacturing method thereof, a packaging structure and a manufacturing method thereof. The spacer includes: a base plate; at least one passive element structure is formed at a first surface of the base plate and includes a circuit pattern formed by a planar process, the circuit pattern including at least two functional terminals for electrical connection with an external circuit; and At least two electrodes are formed on the functional end of the passive element structure, and are used to electrically connect the functional end and the external circuit.

Description

technical field [0001] The present application relates to the field of semiconductor devices, and more particularly, to a gasket, a method for manufacturing a gasket, a package structure, and a method for manufacturing a package structure. Background technique [0002] With the continuous development of the microelectronics industry, the integration of semiconductor devices is getting higher and higher. Semiconductor memory has also developed from two-dimensional to three-dimensional, such as three-dimensional NAND flash (3D NAND flash). And flash memory is constantly being upgraded. [0003] At present, when designing a system-level packaging structure of a memory, in order to improve the signal integrity and power integrity of the memory, some passive components are usually arranged on the bottom plate in the packaging structure. For example, high precision (eg 1%) resistors are placed on the backplane to calibrate the drive impedance and termination resistors, and capac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L27/08H01L21/822H01L27/11524H01L27/11551H01L27/1157H01L27/11578
CPCH01L27/06H01L27/0802H01L27/0805H01L21/822H10B41/20H10B41/35H10B43/20H10B43/35
Inventor 曾心如陈鹏王利琴周厚德侯春源
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com