The invention discloses a
semiconductor structure with through holes and a manufacturing method thereof. The
semiconductor structure comprises a substrate, a plurality of annular through holes and a plurality of
solid through holes; the annular through holes and the
solid through holes are embedded in the substrate; the
solid through holes are through holes filled by
metal; and the annular through holes are through holes filled by solid
dielectric plugs and
metal rings surrounding the solid
dielectric plugs. The manufacturing method comprises the steps of: (1)
etching a plurality of deep holes on a first surface of the substrate; (2) forming a
metal layer; (3) attaching a dry film on the first surface of the substrate and patterning the dry film such that the dry film generates openings on one part of deep holes; (4) filling metal in the deep holes with the openings on the dry film, and removing the dry film; (5) filling
dielectric in the remaining deep holes to form the solid dielectric plugs; and (6)
thinning a second surface of the substrate. The solid through holes of the
semiconductor structure disclosed by the invention can be used for the heat
radiation of laminated chips to improve the completeness of a power supply; and the annular through holes can be used for solving the problems, such as stress, warping deformation and the like of the through hole structures.