Semiconductor bump defect detection method, electronic equipment and storage medium

A defect detection, semiconductor technology, applied in the field of defect detection

Active Publication Date: 2021-04-30
高视科技(苏州)股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Only the spectral confocal 3D imaging method is used to measure the distance, but there is no method suitable for the detection of semiconductor bump defects. Therefore, it is necessary to develop a method based on the 3D point cloud data obtained by the spectral confocal 3D imaging method to detect semiconductor bump defects. detection method

Method used

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  • Semiconductor bump defect detection method, electronic equipment and storage medium
  • Semiconductor bump defect detection method, electronic equipment and storage medium
  • Semiconductor bump defect detection method, electronic equipment and storage medium

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Experimental program
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Effect test

Embodiment 1

[0057] The current method for semiconductor bump defect detection is mainly based on laser line scan imaging. Laser line scan imaging is to project a laser line beam on the surface of the object to be tested through a laser transmitter, receive the reflected laser light through a photodetector, and then use a triangular The measurement method reconstructs the topography of the surface of the object to be measured, but in the above detection technology, some laser reflected beams cannot reach the imaging component due to the blocking of the concave corners of the surface of the object to be measured, resulting in partial positions on the surface of the object to be measured cannot be imaged , the detection accuracy will be affected by this, and the above detection technology is easily affected by the material on the surface of the object to be tested, and the laser emission module and the related imaging device are relatively complicated, which is not conducive to improving the d...

Embodiment 2

[0080] For ease of understanding, an embodiment of a semiconductor bump defect detection method is provided below for description. In practical applications, a 2D depth map to be tested is generated according to the area of ​​each pixel point and the pixel value corresponding to each pixel point.

[0081] figure 2 This is a schematic flowchart of the second embodiment of the semiconductor bump defect detection method shown in the embodiment of the present application.

[0082] see figure 2 , the second embodiment of the semiconductor bump defect detection method shown in the embodiment of the present application includes:

[0083] 201. Scan the wafer through a spectral confocal displacement sensor;

[0084] In this embodiment of the present application, the specific content of step 201 is similar to the content of step 101 in the above-mentioned first embodiment, which is not repeated here.

[0085] 202. Perform point cloud filtering processing on the first 3D point cloud...

Embodiment 3

[0106] For ease of understanding, an example of a semiconductor bump defect detection method is provided below for illustration. In practical applications, each semiconductor bump is segmented and extracted for detection. By calculating the structural parameters of the semiconductor bump, it is judged whether there is a defect in the semiconductor bump .

[0107] image 3 It is a schematic flow chart of Embodiment 3 of the semiconductor bump defect detection method shown in the embodiment of the present application.

[0108] see image 3 , Embodiment 3 of the semiconductor bump defect detection method shown in the embodiment of the present application includes:

[0109] 301. Extract the 2D depth map to be measured;

[0110] The 2D depth map to be tested is binarized. In practical applications, the segmentation threshold can be adjusted according to the actual project to segment a single semiconductor bump, that is, the target detection image of the semiconductor bump to be ...

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Abstract

The invention relates to a semiconductor bump defect detection method. The method comprises the steps of scanning a wafer by a spectral confocal displacement sensor, wherein the wafer comprises N semiconductor bumps, a first 3D point cloud picture is obtained, and N is an integer larger than 1; performing point cloud filtering on the first 3D point cloud image to obtain a second 3D point cloud image; converting the second 3D point cloud image into a to-be-measured 2D depth image, wherein pixel values of pixel points in the to-be-measured 2D depth image correspondingly represent depth information of the pixel points; extracting the to-be-measured 2D depth map to obtain a target detection image of the to-be-measured semiconductor bump; and acquiring structural parameters of the to-be-measured semiconductor bump according to the target detection image, comparing the structural parameters with a standard structural parameter range, and if the structural parameters are not matched with the standard structural parameter range, judging that the to-be-measured semiconductor bump has defects. According to the scheme provided by the invention, the defects of the semiconductor bump can be effectively detected, the detection accuracy is improved, and the quality of the semiconductor bump process is improved.

Description

technical field [0001] The present application relates to the technical field of defect detection, and in particular, to a semiconductor bump defect detection method, an electronic device and a storage medium. Background technique [0002] The current method for semiconductor bump defect detection is mainly based on laser line scan imaging. Laser line scan imaging is to project a laser line beam on the surface of the object to be tested through a laser transmitter, receive the reflected laser light through a photodetector, and then use a triangular The measurement method reconstructs the topography of the surface of the object to be measured, but in the above detection technology, some laser reflected beams cannot reach the imaging component due to the blocking of the concave corners of the surface of the object to be measured, resulting in partial positions on the surface of the object to be measured cannot be imaged , the detection accuracy will be affected by this, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06T7/00G06T7/62G01N21/88H01L21/66
CPCG01N21/8851G01N2021/8887G06T7/0004G06T2207/10028G06T2207/30148G06T7/62H01L22/12
Inventor 张继华姜涌吴垠邹伟金
Owner 高视科技(苏州)股份有限公司
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